Semiconductor device and method for manufacturing the same

ABSTRACT

A pad is formed on an interlayer insulating film, art insulating film is formed on the interlayer insulating film to cover the pad, and an opening portion exposing a part of the pad is formed in the insulating film. A metal film electrically connected to the pad is formed on the pad exposed from the opening portion and on the insulating film. The metal film integrally includes a first portion on the pad exposed from the opening portion and a second portion on the insulating film. An upper surface of the metal film has a wire bonding region for bonding a wire to the metal film and a probe contact region for bringing the probe into contact with the metal film, the wire bonding region is located on the first portion of the metal film, and the probe contact region is located on the second portion of the metal film.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese Patent ApplicationNo. 2018-057207, filed on Mar. 23, 2018, the content of which is herebyincorporated by reference into this application.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to a semiconductor device and a method formanufacturing the same, and for example, can be suitably used for asemiconductor device to which wires are connected, and for a method formanufacturing the semiconductor device.

BACKGROUND OF THE INVENTION

Wires are electrically connected to pads of a semiconductor chip.

Japanese Unexamined Patent Publication No. 2014-187073 (PatentDocument 1) describes a technology relating to a semiconductor devicehaving a bonding pad with an OPM structure.

Japanese Unexamined Patent Publication No. 2014-154640 (Patent Document2) describes a technology relating to a semiconductor device having abonding pad.

Japanese Unexamined Patent Publication No. H9-22912 (Patent Document 3)describes a technology relating to a semiconductor device having a bumpelectrode.

SUMMARY OF THE INVENTION

In a semiconductor device to which wires are connected, it is desiredthat reliability thereof be enhanced.

Other problems and novel features will be apparent from the descriptionin the specification and the accompanying drawings.

In accordance with one embodiment, a semiconductor device includes: apad formed on a first insulating film; a second insulating film formedon the first insulating film so as to cover the pad; an opening portionthat exposes apart of the pad, the opening portion being formed in thesecond insulating film; and a metal film formed on the pad exposed fromthe opening portion and on the second insulating film and electricallyconnected to the pad. The metal film integrally has a first portionlocated on the pad exposed from the opening portion and a second portionlocated on the second insulating film. An upper surface of the metalfilm has a first region for bonding a wire to the metal film and asecond region for bringing a probe into contact with the metal film, thefirst region is located in the first portion of the metal film, and thesecond region is located in the second portion of the metal film.

In accordance with one embodiment, the reliability of the semiconductordevice can be enhanced.

BRIEF DESCRIPTIONS OF THE DRAWINGS

FIG. 1 is an overall plan view of a semiconductor device according toone embodiment;

FIG. 2 is a cross-sectional view showing an example of a semiconductordevice (semiconductor package) in which the semiconductor device(semiconductor chip) in FIG. 1 is packaged;

FIG. 3 is a cross-sectional view showing another example of thesemiconductor device (semiconductor package) in which the semiconductordevice (semiconductor chip) in FIG. 1 is packaged;

FIG. 4 is a process flowchart showing a manufacturing process of thesemiconductor device shown in FIG. 2;

FIG. 5 is a process flowchart showing a manufacturing process of thesemiconductor device shown in FIG. 3;

FIG. 6 is a cross-sectional view showing a principal part of thesemiconductor device according to one embodiment;

FIG. 7 is a cross-sectional view showing a principal part of thesemiconductor device according to one embodiment;

FIG. 8 is a plan view showing a principal part of the semiconductordevice according to one embodiment;

FIG. 9 is a cross-sectional view showing a state where a probe isbrought into contact with a metal film shown in FIG. 7 at a time of aprobe inspection;

FIG. 10 is a cross-sectional view showing a state where a wire is bondedto the metal film shown in FIG. 7;

FIG. 11 is a cross-sectional view showing a principal part of thesemiconductor device according to one embodiment during themanufacturing process;

FIG. 12 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 11;

FIG. 13 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 12;

FIG. 14 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 13;

FIG. 15 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 14;

FIG. 16 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 15;

FIG. 17 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 16;

FIG. 18 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 17;

FIG. 19 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 18;

FIG. 20 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 19;

FIG. 21 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 20;

FIG. 22 is a cross-sectional view showing a principal part of thesemiconductor device during the manufacturing process continued fromFIG. 21;

FIG. 23 is a cross-sectional view showing a principal part of asemiconductor device according to an examination example;

FIG. 24 is a cross-sectional view showing a state where the probe isbrought into contact with a metal film shown in FIG. 23 at the time ofthe probe inspection;

FIG. 25 is a cross-sectional view showing a state where the wire isbonded to the metal film shown in FIG. 23;

FIG. 26 is a plan view showing a principal part of the semiconductordevice according to the examination example;

FIG. 27 is a plan view showing a principal part of the semiconductordevice according to one embodiment;

FIG. 28 is a plan view showing a principal part of the semiconductordevice according to the examination example;

FIG. 29 is a table showing results of investigating damage caused by theprobe inspection;

FIG. 30 is a table showing results of investigating the damage caused bythe probe inspection;

FIG. 31 is a cross-sectional view showing a principal part of asemiconductor device according to a modification;

FIG. 32 is a cross-sectional view showing a state where the probe isbrought into contact with a metal film shown in FIG. 31 at the time ofthe probe inspection; and

FIG. 33 is a cross-sectional view showing a state where the wire isbonded to the metal film shown in FIG. 31.

DESCRIPTIONS OF THE PREFERRED EMBODIMENTS

In the embodiments described below, the invention will be described in aplurality of sections or embodiments when required as a matter ofconvenience. However, these sections or embodiments are not irrelevantto each other unless otherwise stated, and the one relates to the entireor a part of the other as a modification example, details, or asupplementary explanation thereof. Also, in the embodiments describedbelow, when mentioning the number of elements (including number ofpieces, values, amount, range, and the like), the number of the elementsis not limited to a specific number unless otherwise stated or exceptthe case where the number is apparently limited to a specific number inprinciple, and the number larger or smaller than the specified number isalso applicable. Further, in the embodiments described below, it goeswithout saying that the components (including element steps) are notalways indispensable unless otherwise stated or except the case wherethe components are apparently indispensable in principle. Similarly, inthe embodiments described below, when the shape of the components,positional relation thereof, and the like are mentioned, thesubstantially approximate and similar shapes and the like are includedtherein unless otherwise stated or except the case where it isconceivable that they are apparently excluded in principle. The samegoes for the numerical value and the range described above.

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that componentshaving the same function are denoted by the same reference charactersthroughout the drawings for describing the embodiments, and therepetitive description thereof will be omitted. In addition, thedescription of the same or similar portions is not repeated in principleunless particularly required in the following embodiments.

Also, in some drawings used in the following embodiments, hatching isomitted even in a cross-sectional view so as to make the drawings easyto see. In addition, hatching is used even in a plan view so as to makethe drawings easy to see.

Embodiment

<Overall Structure of Semiconductor Chip>

A semiconductor device according to this embodiment will be describedwith reference to the drawings.

FIG. 1 is an overall plan view of a semiconductor device (semiconductorchip) CP according to this embodiment, and FIG. 1 shows an overall planview of an upper surface of the semiconductor device CP.

The semiconductor device (semiconductor chip) CP according to thisembodiment has an upper surface that is a main surface on one side, anda back surface (lower surface) that is a main surface on an oppositeside with the upper surface. FIG. 1 shows the upper surface of thesemiconductor device CP. Note that, in the semiconductor device CP, themain surface on a side on which pads PD are formed will be referred toas the upper surface, and the main surface on an opposite side with themain surface on the side on which the pads PD are formed (that is, theupper surface) will be referred to as the back surface of thesemiconductor device CP.

As shown in FIG. 1, the semiconductor device CP includes a plurality ofthe pads (pad electrodes, electrodes pads, bonding pads) PD on the uppersurface side. The pads PD function as externally connecting terminals ofthe semiconductor device CP. The pads PD are pads for wire bonding.Moreover, though details will be described later, metal films ME areformed on the respective pads PD. When the upper surface of thesemiconductor device CP is viewed from above, the metal films ME areobserved; however, the pads PD are hidden under the metal films ME. Whenmanufacturing a semiconductor package using the semiconductor device CP,wires (corresponding to wires BW to be described later) are bonded tothe metal films ME on the pads PD, and the wires and the pads PD areelectrically connected via the metal films ME.

A planar shape of the semiconductor device CP is a quadrangle, and morespecifically a rectangle. Corners of the rectangle may be rounded. Inthe case of FIG. 1, on the upper surface of the semiconductor device CP,a plurality of pairs of the pads PD and the metal films ME formed on thepads PD are arrayed along an outer periphery of the upper surface of thesemiconductor device CP. In the case of FIG. 1, the plurality of pairsof the pads PD and the metal films ME formed on the pads PD are formedalong four sides on the upper surface of the semiconductor device CP;however, without being limited to this, sometimes may possibly bedisposed (arrayed) along three sides, two sides or one side. Moreover,in the case of FIG. 1, the pairs of the pads PD and the metal films MEformed on the pads PD are arrayed in one line; however, without beinglimited to this, for example, can also be arrayed in two lines, andfurther, can be arrayed in a so-called staggered pattern. Moreover, thenumber of pairs of the pads PD provided in the semiconductor device CPand the metal films ME formed on the pads PD is changeable according toneeds.

<Semiconductor Package Structure>

FIG. 2 is a cross-sectional view schematically showing an example of asemiconductor device (semiconductor package) PKG in which thesemiconductor device (semiconductor chip) CP according to thisembodiment is packaged, and FIG. 3 is a cross-sectional view showinganother example thereof. Note that the semiconductor device PKG shown inFIG. 2 will be referred to as a semiconductor device PKG1 by being addedwith reference symbol PKG1, and the semiconductor device PKG shown inFIG. 3 will be referred to as a semiconductor device PKG2 by being addedwith reference symbol PKG2.

The semiconductor device (semiconductor package) PKG1 shown in FIG. 2 isa semiconductor package manufactured using a lead frame. Thesemiconductor device PKG 1 includes: the semiconductor device(semiconductor chip) CP; a die pad (chip mounting portion) DP thatsupports or mounts the semiconductor chip CP; a plurality of leads LD; aplurality of wires (bonding wires) BW which electrically connect theplurality of leads LD and the plurality of pads PD on the upper surfaceof the semiconductor device CP individually to each other; and a sealingportion MR1 that seals these.

The sealing portion (sealing resin portion) MR1 is a sealing resinportion, and for example, is made of a resin material such as athermosetting resin material, and may also contain filler and the like.By the sealing portion MR1, the semiconductor device CP, the pluralityof leads LD and the plurality of wires BW are sealed, and areelectrically and mechanically protected.

The semiconductor device CP is mounted (disposed) on an upper surface ofthe die pad DP so that the upper surface of the semiconductor device CPfaces upward, and the back surface of the semiconductor device CP isbonded and fixed to the upper surface of the die pad DP with a bondingmaterial (die bonding material, adhesive) BD1 interposed therebetween.Moreover, the semiconductor device CP is sealed in the sealing portionMR1, and is not exposed from the sealing portion MR1.

The leads (lead portions) LD are made of a conductor, and preferably,are made of a metal material such as copper (Cu) and a copper alloy. Therespective leads LD are composed of inner lead portions which areportions located in the sealing portion MR1 among the leads LD, and ofouter lead portions which are portions located outside of the sealingportion MR1 among the leads LD. The outer lead portions protrude fromside surfaces of the sealing portion MR1 to the outside of the sealingportion MR1.

The outer lead portions of the respective leads LD are subjected to abending process so that lower surfaces near end portions of the outerlead portions are located a little below a lower surface of the sealingportion MR1. The outer lead portions of the leads LD function asexternal terminals of the semiconductor device PKG1.

The respective pads PD on the upper surface of the semiconductor deviceCP are electrically connected to the inner lead portions of therespective leads LD through the wires (bonding wires) BW which areconductive connection members. That is, between both ends of each wireBW, one end portion is connected to each pad PD of the semiconductordevice CP, and the other end portion is connected to an upper surface ofthe inner lead portion of each lead LD. However, though details will bedescribed later, the metal film ME is formed on the pad PD, and the endportion of the wire BW, which is connected to the pad PD, is actuallybonded (connected) to the metal film ME on the pad PD. The wire BW hasconductivity, and specifically, is a metal wire (thin metal wire) suchas a copper (Cu) wire and a gold (Au) wire. The wire BW is sealed in thesealing portion MR1, and is not exposed from the sealing portion MR1.

Note that the description has been given here of the case where thesemiconductor device PKG1 is a quad flat package (QFP)-typesemiconductor package. However, the semiconductor device PKG1 is notlimited to this, and is changeable in various ways. For example, thesemiconductor device PKG1 may adopt another package configuration suchas a quad flat non-leaded package (QFN) configuration and a smallout-line package (SOP) configuration.

The semiconductor device (semiconductor package) PKG2 shown in FIG. 3 isa semiconductor package manufactured using a wiring board. Thesemiconductor device PKG2 includes: a semiconductor device(semiconductor chip) CP; a wiring board PC that mounts (supports) thesemiconductor device CP; a plurality of wires BW which electricallyconnect a plurality of pads PD on an upper surface of the semiconductordevice CP and a plurality of connection terminals BLD of the wiringboard PC corresponding to the pads PD; and a sealing portion MR2 thatcovers an upper surface of the wiring board PC including thesemiconductor device CP and the wires BW. The semiconductor device PKG2further includes a plurality of solder balls BL provided as externalterminals on a lower surface of the wiring board PC in an area arrayarrangement.

The wiring board PC has an upper surface and a lower surface, which aremain surfaces opposite with each other. The semiconductor device CP ismounted (disposed) on the upper surface of the wiring board PC so thatthe upper surface of the semiconductor device CP faces upward, and aback surface of the semiconductor device CP is bonded and fixed to theupper surface of the wiring board PC with a bonding material (diebonding material, adhesive) BD2 interposed therebetween. Thesemiconductor device CP is sealed in the sealing portion MR2, and is notexposed from the sealing portion MR2.

A plurality of connection terminals (bonding leads) BLD are provided onthe upper surface of the wiring board PC, and a plurality of conductivelands DL are provided on the lower surface of the wiring board PC. Theplurality of connection terminals BLD on the upper surface of the wiringboard PC are electrically connected individually to the plurality ofconductive lands DL on the lower surface of the wiring board PC throughwirings of the wiring board PC. The wirings of the wiring board PCinclude wirings on the upper surface of the wiring board PC, via wiringsof the wiring board PC, internal wirings of the wiring board PC, andwirings on the lower surface of the wiring board PC. The solder balls BLare connected (formed) as bump electrodes to the respective conductivelands DL. Therefore, the plurality of solder balls BL are arranged in anarray form on the lower surface of the wiring board PC, and theplurality of solder balls BL can function as external terminals of thesemiconductor device PKG2.

The respective pads PD on the upper surface of the semiconductor deviceCP are electrically connected to the respective connection terminals BLDon the upper surface of the wiring board PC through the wires (bondingwires) BW which are conductive connection members. That is, between bothends of each wire BW, one end portion is connected to each pad PD of thesemiconductor device CP, and the other end portion is connected to eachconnection terminal BLD. However, though details will be describedlater, the metal film ME is formed on the pad PD, and the end portion ofthe wire BW, which is connected to the pad PD, is actually bonded(connected) to the metal film ME on the pad PD. The wire BW is sealed inthe sealing portion MR2, and is not exposed from the sealing portionMR2.

Similarly to the sealing portion MR1 described above, the sealingportion (sealing resin portion) MR2 is a sealing resin portion, and forexample, is made of a resin material such as a thermosetting resinmaterial, and may also contain filler and the like. By the sealingportion MR2, the semiconductor device CP and the plurality of wires BWare sealed, and are electrically and mechanically protected.

Note that the description has been given here of the case where thesemiconductor device PKG2 is a ball grid array (BGA)-type semiconductorpackage. However, the semiconductor device PKG2 is not limited to this,is changeable in various ways, and for example, may adopt anotherpackage configuration such as a land grid array (LGA) configuration.

Next a description will be given of a manufacturing process of thesemiconductor device PKG1 shown in FIG. 2 and a manufacturing process ofthe semiconductor device PKG2 shown in FIG. 3. FIG. 4 is a processflowchart showing the manufacturing process of the semiconductor devicePKG1 shown in FIG. 2, and FIG. 5 is a process flowchart showing themanufacturing process of the semiconductor device PKG2 shown in FIG. 3.

First, the manufacturing process of the semiconductor device PKG1 shownin FIG. 2 will be described with reference to FIG. 2 and FIG. 4.

In order to manufacture the semiconductor device PKG1, first, the leadframe and the semiconductor device (semiconductor chip) CP are prepared(Step S1 in FIG. 4). The lead frame integrally includes a framework, theplurality of leads LD coupled to the framework, and the die pad DPcoupled to the framework with a plurality of suspension leads interposedtherebetween. In Step S1, the semiconductor device CP may be preparedafter the lead frame is prepared beforehand, or the lead frame may beprepared after the semiconductor device CP is prepared beforehand, orthe lead frame and the semiconductor device CP may be preparedsimultaneously.

Note that, as shown in FIG. 4, the lead frame can be prepared byfabricating (manufacturing) the lead frame, and moreover, thesemiconductor device CP can be prepared by manufacturing thesemiconductor device CP. The manufacturing process of the semiconductordevice CP is performed by a wafer process, a subsequent probe inspection(wafer test) step and subsequent back-grinding step and dicing step.Details of the manufacturing process will be described later withreference to FIGS. 11 to 22 to be mentioned later. Note that, though thedicing step is performed after the back-grinding step, the dicing stepmay possibly be performed without performing the back-grinding step.

Next, a die bonding step is performed, and the semiconductor device CPis mounted and bonded on the die pad DP of the lead frame with thebonding material BD1 interposed therebetween (Step S2 in FIG. 4).

Next, a wire bonding step is performed, and the plurality of pads PD ofthe semiconductor device CP and (the inner lead portions of) theplurality of leads LD of the lead frame are electrically connected toeach other through the plurality of wires BW (Step S3 in FIG. 4). Oneend portion of each wire BW is connected to the metal film ME on eachpad PD of the semiconductor device CP, and the other end portion isconnected to an upper surface of the inner lead portion of each lead LD.In the case of the wire bonding, the semiconductor device CP is heatedto a predetermined temperature.

Next, resin sealing by a molding step (resin molding step) is performed,and the semiconductor device CP and the plurality of wires BW connectedthereto are sealed by the sealing portion (sealing resin portion) MR1(Step S4 in FIG. 4). By the molding step of this Step S4, the sealingportion MR1 that seals the semiconductor device CP, the die pad DP, theinner lead portions of the plurality of leads LD and the plurality ofwires BW and suspension leads is formed.

Next, a plating treatment is implemented for the outer lead portions ofthe leads LD exposed from the sealing portion MR1 according to needs,and then, the leads LD and the suspension leads are cut at predeterminedpositions outside the sealing portion MR1, and are separated from theframework of the lead frame (Step S5 in FIG. 4).

Next, a bending process (lead process, lead forming) is implemented forthe outer lead portions of the leads LD protruding from the sealingportion MR1 (Step S6 in FIG. 4).

In this way, the semiconductor device PKG1 shown in FIG. 2 ismanufactured.

Next, a manufacturing process of the semiconductor device PKG2 shown inFIG. 3 will be described with reference to FIG. 3 and FIG. 5.

In order to manufacture the semiconductor device PKG2, first, the wiringboard PC and the semiconductor device (semiconductor chip) CP areprepared (Step S11 in FIG. 5). At this stage, a plurality of the wiringboards PC may be integrally connected to one another in an array form.In Step S11, the semiconductor device CP may be prepared after the leadframe is prepared beforehand, or the wiring board PC may be preparedafter the semiconductor device CP is prepared beforehand, or the wiringboard PC and the semiconductor device CP may be prepared simultaneously.

Next, a die bonding step is performed, and the semiconductor device(semiconductor chip) CP is mounted and bonded on the wiring board PCwith the bonding material BD2 interposed therebetween (Step S12 in FIG.5).

Next, a wire bonding step is performed, and the plurality of pads PD ofthe semiconductor device CP and the plurality of connection terminalsBLD of the wiring board PC on which the semiconductor device CP ismounted are electrically connected to each other through the pluralityof wires BW (Step S13 in FIG. 5). One end portion of each wire BW isconnected to the metal film ME on each pad PD of the semiconductordevice CP, and the other end portion is connected to each connectionterminal BLD. In the case of the wire bonding, the semiconductor deviceCP is heated to a predetermined temperature.

Next, resin sealing by a molding step (resin molding step) is performedto form the sealing portion (sealing resin portion) MR2 on the uppersurface of the wiring board PC so as to cover the semiconductor deviceCP and the wires BW, and the semiconductor device CP and the wires BWare sealed by the sealing portion MR2 (Step S14 in FIG. 5).

Next, the solder balls BL are connected to the respective conductivelands DL on the lower surface of the wiring board PC (Step S15 in FIG.5).

Thereafter, when the plurality of wiring boards PC are connectedintegrally with one another in an array form, a wiring board base inwhich the plurality of wiring boards PC is connected integrally with oneanother in an array form is cut (dicing), thereby being divided into theindividual wiring boards PC (Step S16 in FIG. 5). At this time, thesealing portion MR2 may also possibly be cut together with the wiringboard base.

In this way, the semiconductor device PKG2 shown in FIG. 3 ismanufactured.

<Internal Structure of Semiconductor Chip>

FIG. 6 is a cross-sectional view showing a principal part of thesemiconductor device (semiconductor chip) CP according to thisembodiment. Moreover, FIG. 7 is also a cross-sectional view showing aprincipal part of the semiconductor device CP according to thisembodiment, and the same cross section as that in FIG. 6 is shown. InFIG. 7, illustration of a structure below an interlayer insulating filmIL8 is omitted.

In the semiconductor device CP according to this embodiment, asemiconductor element such as a metal insulator semiconductor fieldeffect transistor (MISFET) is formed on a main surface of asemiconductor substrate SB, and a multilayer wiring structure includinga plurality of wiring layers is formed on the semiconductor substrateSB. Hereinafter, a specific description will be given of a configurationexample of the semiconductor device according to this embodiment.

As shown in FIG. 6, the semiconductor element such as a MISFET is formedon the semiconductor substrate SB that constitutes the semiconductordevice according to this embodiment and is made of single crystalsilicon.

In the main surface of the semiconductor substrate SB, an elementisolation region ST is formed by a shallow trench isolation (STI) methodand the like, and in the semiconductor substrate SB, a MISFET 1 isformed in an active region defined by this element isolation region ST.The element isolation region ST is composed of an insulating filmembedded in a trench formed in the semiconductor substrate SB.

The MISFET 1 includes: a gate electrode GE formed on the main surface ofthe semiconductor substrate SB with a gate insulating film interposedtherebetween; and a source/drain region (semiconductor region for sourceor drain) SD formed in the semiconductor substrate SB on each of bothsides of the gate electrode GE. A lightly doped drain (LDD) structurecan also be adopted for the source/drain region SD, and in that case, asidewall insulating film (not shown) also referred to as a sidewallspacer is formed on a sidewall of the gate electrode GE. As the MISFET1, it is possible to form an n-channel MISFET or a p-channel MISFET orboth of the n-channel MISFET and the p-channel MISFET. Note that thesource/drain region SD of the n-channel MISFET is formed in a p-typewell (not shown) of the semiconductor substrate SB, and the source/drainregion SD of the p-channel MISFET is formed in an n-type well (notshown) of the semiconductor substrate SB.

Note that, here, the description is made by taking the MISFET as anexample of the semiconductor element formed on the semiconductorsubstrate SB; however, besides the above, a capacitor element, aresistor element, a memory element, a transistor with anotherconfiguration, and the like may be formed.

Moreover, here, the description is made by taking the single crystalsilicon substrate as an example of the semiconductor substrate SB;however, as another mode, a silicon on insulator (SOI) substrate or thelike can also be used as the semiconductor substrate SB.

On the semiconductor substrate SB, a wiring structure (multilayer wiringstructure) including a plurality of insulating films (interlayerinsulating films) and a plurality of wiring layers is formed.

That is, on the semiconductor substrate SB, a plurality of interlayerinsulating films (insulating films) IL1, IL2, IL3, IL4, IL5, IL 6 andIL7 are formed, and in the plurality of interlayer insulating films IL1,IL2, IL3, IL4, IL5, IL 6 and IL7, plugs V1, via portions V2, V3, V4, V5and V6 and wirings M1, M2, M3, M4, M5 and M6 are formed. Thereafter, theinterlayer insulating film IL8 is formed on the interlayer insulatingfilm IL7, and each pad PD is formed on this interlayer insulating filmIL8. Note that wiring (not shown) in the same layer as the pad PD canalso be formed on the interlayer insulating film IL8.

Specifically, the interlayer insulating film IL1 is formed on thesemiconductor substrate SB so as to cover the above-described MISFET 1,the conductive plugs V1 are embedded in this interlayer insulating filmIL1, the interlayer insulating film IL2 is formed on the interlayerinsulating film IL1 in which the plugs V1 are embedded, and the wiringM1 is embedded in this interlayer insulating film IL2. Thereafter, theinterlayer insulating film IL3 is formed on the interlayer insulatingfilm IL2 in which the wiring M1 is embedded, the wiring M2 is embeddedin this interlayer insulating film IL3, the interlayer insulating filmIL4 is formed on the interlayer insulating film IL3 in which the wiringM2 is embedded, and the wiring M3 is embedded in this interlayerinsulating film IL4. Thereafter, the interlayer insulating film IL5 isformed on the interlayer insulating film IL4 in which the wiring M3 isembedded, the wring M4 is embedded in this interlayer insulating filmIL5, the interlayer insulating film IL6 is formed on the interlayerinsulating film IL5 in which the wiring M4 is embedded, and the wiringM5 is embedded in this interlayer insulating film IL6. Thereafter, theinterlayer insulating film IL7 is formed on the interlayer insulatingfilm IL6 in which the wiring M5 is embedded, the wring M6 is embedded inthis interlayer insulating film IL7, the interlayer insulating film IL8is formed on the interlayer insulating film IL7 in which the wiring M6is embedded, and the pad PD is formed on this interlayer insulating filmIL8. Each of the interlayer insulating films IL1 to IL8 can be formed asa single-layer insulating film (for example, a silicon oxide film), oras a laminated film of a plurality of insulating films. Thereafter, aninsulating film PV is formed on the interlayer insulating film IL8 so asto cover the pad PD, and in this insulating film PV, the opening portionOP that exposes a part of the pad PD is formed. The insulating film PVdoes not completely cover the whole of the pad PD, but covers a sidesurface of the pad PD and a region of the upper surface of the pad PDother than a portion exposed from the opening portion OP.

Each of the plugs V1 is composed of a conductor, and is disposed underthe wiring M1. The plugs V1 electrically connect the wirings M1 tovarious semiconductor regions (for example, the source/drain region SD),the gate electrodes GE and the like formed on the semiconductorsubstrate SB.

Each of the via portions V2 is composed of a conductor, is formedintegrally with the wiring M2, is disposed between the wiring M2 and thewiring M1, and electrically connects the wiring M2 and the wiring M1 toeach other. That is, by using a dual damascene method, the wiring M2 andthe via portion V2 formed integrally with the wiring M2 are embedded inthe interlayer insulating film IL3. As another mode, it is also possibleto form the via portion V2 and the wiring M2 separately from each otherby using a single damascene method, and the same is true for the viaportions V3, V4, V5, V6 and V7.

Each of the via portions V3 is composed of a conductor, is formedintegrally with the wiring M3, is disposed between the wiring M3 and thewiring M2, and electrically connects the wiring M3 and the wiring M2 toeach other. That is, by using a dual damascene method, the wiring M3 andthe via portion V3 formed integrally with the wiring M3 are embedded inthe interlayer insulating film IL4.

Each of the via portions V4 is composed of a conductor, is formedintegrally with the wiring M4, is disposed between the wiring M4 and thewiring M3, and electrically connects the wiring M4 and the wiring M3 toeach other. That is, by using a dual damascene method, the wiring M4 andthe via portion V4 formed integrally with the wiring M4 are embedded inthe interlayer insulating film IL5.

Each of the via portions V5 is composed of a conductor, is formedintegrally with the wiring M5, is disposed between the wiring M5 and thewiring M4, and electrically connects the wiring M5 and the wiring M4 toeach other. That is, by using a dual damascene method, the wiring M5 andthe via portion V5 formed integrally with the wiring M5 are embedded inthe interlayer insulating film IL6.

Each of the via portions V6 is composed of a conductor, is formedintegrally with the wiring M6, is disposed between the wiring M6 and thewiring M5, and electrically connects the wiring M6 and the wiring M5 toeach other. That is, by using a dual damascene method, the wiring M6 andthe via portion V6 formed integrally with the wiring M6 are embedded inthe interlayer insulating film IL7.

Moreover, here, the wirings M1, M2, M3, M4, M5 and M6 are illustratedand described as damascene wirings (embedded wirings) formed by thedamascene method; however, are not limited to the damascene wirings, canalso be formed by patterning conductor films for wiring, and forexample, can also be aluminum wirings.

As shown in FIG. 6 and FIG. 7, in the interlayer insulating film IL8, anopening portion (through hole) SH is formed at a position overlappingthe pad PD in plan view, and the via portion V7 is formed (embedded) inthe opening portion SH. The via portion V7 is composed of a conductor,is formed between the pad PD and the wiring M6, and electricallyconnects the pad PD and the wiring M6 to each other. That is, by usingthe single damascene method, the via portion V7 is embedded in theinterlayer insulating film IL8.

Note that, though the via portion V7 and the pad PD are formedseparately from each other in this embodiment, it is also possible toform the via portion V7 and the pad PD integrally with each other asanother mode. In the case of forming the via portion V7 and the pad PDintegrally with each other, a part of the pad PD fills the openingportion SH of the interlayer insulating film IL8, whereby the viaportion V7 is formed.

On the semiconductor substrate SB, the wiring structure (multilayerwiring structure) including the plurality of insulating films(interlayer insulating films) and the plurality of wiring layers isformed, and the pad PD is included in the uppermost wiring layer amongthe plurality of wiring layers included in the wiring structure formedon the semiconductor substrate SB. Moreover, the wiring M6 is a wiringin the wiring layer just below the uppermost wiring layer among theplurality of wiring layers included in the wiring structure.

A thickness of the wiring M6 is larger than respective thicknesses ofthe wirings M1, M2, M3, M4 and M5, and a thickness of the pad PD islarger than the thickness of the wiring M6. Moreover, a width of thewiring M6 is larger than respective widths of the wirings M1, M2, M3, M4and M5, and a width of the pad PD is larger than the width of the wiringM6. Note that the width of the wiring corresponds to a width (dimension)in a direction that is substantially parallel to the main surface of thesemiconductor substrate SB and is substantially perpendicular to anextending direction of the wiring. Moreover, the width of the pad PDcorresponds to a dimension in a short-side direction of the pad PD.Furthermore, respective thicknesses of the interlayer insulating filmsIL7 and IL8 are larger than respective thicknesses of the interlayerinsulating films IL2, IL3, IL4, IL5 and IL6.

Note that, here, the description has been given of the case where thenumber of wiring layers included in the wiring structure formed on thesemiconductor substrate SB is totally seven, including the wiring layerin which the pad PD is formed; however, the number of wiring layersincluded in the wiring structure formed on the semiconductor substrateSB is not limited to this, and is changeable in various ways. However,the plurality of wiring layers are included in the wiring structureformed on the semiconductor substrate SB, and the pad PD is included inthe uppermost wiring layer among the plurality of wiring layers.

As shown in FIG. 6 and FIG. 7, the pad PD is formed on the interlayerinsulating film IL8, the insulating film (passivation film) PV is formedon the interlayer insulating film IL8 so as to cover a part of the padPD, and a part of the pad PD is exposed from the opening portion OPprovided in the insulating film PV. That is, the opening portion OP isan opening portion for the pad PD, and the opening portion OP isincluded in the pad PD in plan view. Therefore, a plane dimension (planearea) of the opening portion OP is smaller than a plane dimension (planearea) of the pad PD, and the pad PD has a portion exposed from theopening portion OP (that is, a portion that overlaps the opening portionOP in plan view) and a portion covered with the insulating film PV (thatis, a portion that does not overlap the opening portion OP in planview).

The insulating film PV is the uppermost film of the semiconductor device(semiconductor chip) CP, and can function as a surface protection film.That is, the insulating film PV is a passivation film. However, a partof the metal film ME is formed on the insulating film PV. Respectiveplane shapes of the pad PD, the opening portion OP and the metal film MEare, for example, are quadrangular (more specifically, rectangular). Asthe insulating film PV, a single-layer insulating film or a laminatedinsulating film formed by laminating a plurality of insulating films onone another can be used. FIG. 7 shows a case where the insulating filmPV is composed of a laminated film (laminated insulating film) of aninsulating film PV1 and an insulating film PV2 on the insulating filmPV1. The insulating film PV1 is preferably a silicon nitride film, andthe insulating film PV2 is preferably a silicon oxide film.

The pad PD is an aluminum pad mainly formed of aluminum (Al).Specifically, as shown in FIG. 7, the pad PD is formed of a laminatedfilm including: a barrier conductor film (barrier conductive film) BR1;an aluminum (Al)-containing conductive film AM1 on the barrier conductorfilm BR1; and a barrier conductor film (barrier conductive film) BR2 onthe Al-containing conductive film AM1. Note that, in a portion of thepad PD, which is located under the insulating film PV, the barrierconductor film BR2 is formed on the Al-containing conductive film AM1,and in a portion of the pad PD, which is exposed from the openingportion OP of the insulating film PV, the barrier conductor film BR2 isnot formed on the Al-containing conductive film AM1. This is because thebarrier conductor film BR2 of the portion exposed from the openingportion OP of the insulating film PV is removed.

The Al-containing conductive film AM1 is a conductive film containingaluminum (Al), and preferably, is composed of a conductive material film(but a conductive material film exhibiting metal conduction) containingaluminum (Al) as a main component (main body). As the Al-containingconductive film AM1, an aluminum film (pure aluminum film) can be used;however, without being limited to this, a compound film or an alloyfilm, which contains aluminum (Al) as a main component (main body), canalso be used. For example, a compound film or alloy film of aluminum(Al) and silicon (Si), or a compound film or alloy film of aluminum (Al)and copper (Cu), or a compound film or alloy film of aluminum (Al),silicon (Si) and copper (Cu) can be suitably used as the Al-containingconductive film AM1. A composition ratio (content ratio) of aluminum(Al) in the Al-containing conductive film AM1 is larger 50 atom % (thatis, Al-containing conductive film AM1 is Al-rich), and preferably, 98atom % or more.

Both of the barrier conductor film BR1 and the barrier conductor filmBR2 are conductive films (preferably, conductive films exhibiting metalconduction). Between these, the barrier conductor film BR1 has afunction to enhance adhesion with an underlying base (for example, theinterlayer insulating film IL8) and to prevent delamination therefrom.Therefore, desirably, the barrier conductor film BR1 is excellent inadhesion with the underlying base (for example, the interlayerinsulating film IL8) and in adhesion with the Al-containing conductivefilm AM1 formed on the barrier conductor film BR1. As the barrierconductor film BR1, for example, a laminated film of a titanium (Ti)film, a titanium nitride (TiN) film and a titanium (Ti) in order fromthe bottom can be suitably used. Besides, for example, a single film ofa titanium (Ti) film, a single film of a titanium nitride (TiN) film, alaminated film of a titanium (Ti) film and a titanium nitride (TiN) filmor the like can be used as the barrier conductor film BR1.

The barrier conductor film BR2 has a function to enhance adhesion withthe insulating film PV and to prevent delamination therefrom. Therefore,desirably, the barrier conductor film BR2 is excellent in adhesion withthe Al-containing conductive film AM1 as an underlying base and inadhesion with the insulating film PV formed on the barrier conductorfilm BR2. Moreover, the barrier conductor film BR2 can also function asan antireflection film in a photolithography process.

As the barrier conductor film BR2, a titanium nitride (TiN) film can besuitably used. Besides, for example, a titanium (Ti) film, a tantalum(Ta) film, a tantalum nitride (TaN) film, a tungsten (W) film, atungsten nitride (WN) film, a titanium tungsten (TiW) film or a tantalumtungsten (TaW) film can be used as the barrier conductor film BR2.

The Al-containing conductive film AM1 can function as a main conductorfilm of the pad PD. A thickness of the Al-containing conductive film AM1is larger than respective thicknesses of the barrier conductor films BR1and BR2. The pad PD is mainly formed of the Al-containing conductivefilm AM1, and accordingly, can be regarded as an aluminum pad. Moreover,as another mode, either one or both of the barrier conductor films BR1and BR2 can be omitted if unnecessary.

The pad PD is electrically connected to the wiring M6 in the layer lowerthan the pad PD through the via portion V7. The via portion V7 ispreferably formed at a position that overlaps the pad PD but does notoverlap the opening portion OP in plan view. That is, preferably, thevia portion V7 is disposed under the pad PD in a portion covered withthe insulating film PV.

As another mode, it is also possible to adopt the structure in which awiring in the same layer as the pad PD is connected to the pad PD andthe wiring is electrically connected to the wiring M6 in a lower layerthrough a via portion in the same layer as the via portion V7 (through aconductive via portion embedded in the interlayer insulating film IL8).In that case, it is not necessary to provide the via portion V7 underthe pad PD. Also, the wiring formed in the same layer as the pad PD andconnected to the pad PD is formed integrally with the pad PD, and a viaportion in the same layer as the via portion V7 just needs to bedisposed under the wiring.

The metal film (metal layer) ME is formed over the pad PD exposed fromthe opening portion OP of the insulating film PV and the insulating filmPV around the opening portion OP. The metal film ME integrally includesa portion located on the insulating film PV (that is, a portion hangingon the insulating film PV) and a portion located on the pad PD exposedfrom the opening portion OP of the insulating film PV. A plane dimension(plane area) of the metal film ME is larger than the plane dimension(plane area) of the opening portion OP, and the opening portion OP isincluded in the metal film ME in plan view.

The metal film ME is not a bump electrode but a base film whenperforming the wire bonding, and can function as an over pad metal (OPM)film. Therefore, the above-described wire BW as a connecting member isbonded to the metal film ME, and the above-described wire BW iselectrically connected to the pad PD through the metal film ME (refer toFIG. 10 to be mentioned later).

In this embodiment, the metal film ME is formed on the pad PD exposedfrom the opening portion OP of the insulating film PV, and accordinglywhen the wire bonding is performed for the pad PD, the wire BW is bonded(connected) to the metal film ME on the pad PD. That is, the wire BW isbonded (connected) to the metal film ME (first portion MEa of the metalfilm ME) located on the pad PD exposed from the opening portion OP ofthe insulating film PV. In other words, the wire BW is not directlybonded (connected) to the pad PD, but in a state where the metal film MEis formed on the pad PD, the wire BW is pressed and bonded (connected)to the metal film ME on the pad PD. Therefore, when the wire bonding isperformed to electrically connect the wire BW to the pad PD, the metalfilm ME is interposed between the pad PD and the wire BW.

Here, a portion of the metal film ME located on the pad PD exposed fromthe opening portion OP of the insulating film PV will be referred to asthe first portion Mea, and a portion of the metal film ME located on theinsulating film PV (that is, a portion hanging on the insulating filmPV) will be referred to as a second portion MEb (refer to FIG. 7). Themetal film ME integrally includes the first portion MEa and the secondportion MEb. The insulating film PV is present under the second portionMEb of the metal film ME, and further, the pad PD is present under theinsulating film PV. Meanwhile, under the first portion MEa of the metalfilm ME, the insulating film PV is not present, but the pad PD ispresent.

The second portion MEb of the metal film ME is not formed over theentire insulating film PV, but is formed on a part of the insulatingfilm PV. The metal film ME located on the insulating film PV (that is,the second portion MEb of the metal film ME) and the metal film MElocated on the pad PD exposed from the opening portion OP of theinsulating film PV (that is, the first portion MEa of the metal film ME)are not isolated from each other, but are formed continuously(integrally) with each other.

The metal film ME is in contact with the upper surface of the pad PDexposed from the opening portion OP of the insulating film PV, an innerwall of the opening portion OP of the insulating film PV (that is, aside surface of the insulating film PV), and an upper surface of theinsulating film PV. An outer periphery (outer peripheral side surface)of the metal film ME is located on the insulating film PV. In theportion of the pad PD exposed from the opening portion OP, the barrierconductor film BR2 on the Al-containing conductive film AM1 is removed,and thus the metal film ME is formed on the Al-containing conductivefilm AM1 of the pad PD (so as to be in contact with the Al-containingconductive film AM1) on a bottom of the opening portion OP of theinsulating film PV.

The metal film ME is a single-layer metal film or a laminated metal filmformed by laminating a plurality of metal films on one another. Here, asshown in FIG. 7, the metal film ME is composed of a laminated film(laminated metal film) of a metal film (metal layer) ME1 and a metalfilm (metal layer) ME2 located on the metal film ME1. The metal film ME2is a plated film (metal-plated film), and is formed by a plating method(more specifically, an electroplating method). The metal film ME1 isused as a seed layer (power-feeding conductor layer) when forming themetal film ME2. A thickness of the metal film ME2 is larger than athickness of the metal ME1, and the metal film ME is mainly composed ofthe metal film ME2.

The metal film ME2 is a film (uppermost film) which the above-describedwire BW is brought into contact with and bonded to when electricallyconnecting the wire BW to the pad PD by the wire bonding. When a surfaceof the metal film ME2 is oxidized, it becomes difficult to bond the wireBW to the metal film ME2. Accordingly, it is preferable that the metalfilm ME2 be made of metal difficult to oxidize. Moreover, the metal filmME2 is preferably made of a material to which the wire BW can be easilybonded and which is able to increase a bonding strength of the wire BW.Moreover, the material of the metal film ME2 is preferably selected sothat an easily corrosive reactant (reaction product) is not formed evenif the metal film ME2 and the wire BW react with each other. Inconsideration of such a viewpoint, the metal film ME2 is preferably agold (Au) film.

The metal film ME1 is used as the seed layer when forming the metal filmME2. Preferably, the metal film ME1 is made of such a material thatincreases adhesion (adhesive properties) to the metal film ME2 formed onthe metal film ME1. Moreover, preferably, the metal film ME1 is made ofsuch a material that increases adhesion (adhesive properties) to theunderlying base (here, the pad PD and the insulating film PV).Furthermore, preferably, the metal film ME1 is made of a material havingbarrier properties against aluminum (Al) that constitutes the pad PD andthe metal that constitutes the metal film ME2.

In consideration of such a viewpoint, as the metal film ME1, it ispossible to suitably use a single-layer film or a laminated film, whichis composed of one or more layers selected from a titanium (Ti) film, atitanium nitride film (TiN) film, a tantalum (Ta) film, a titaniumnitride (TaN) film, a tungsten (W) film, a tungsten nitride (WN) film, atitanium tungsten (TiW) film and a tantalum tungsten (TaW) film. Notethat a metal compound film exhibiting metal conduction such as thetitanium nitride film mentioned above can also be regarded as a metalfilm, and the metal compound film exhibiting metal conduction can alsobe used as the metal film ME1. However, preferably, the metal film ME1includes the titanium (Ti) film, and a single-layer film of a titanium(Ti) film or a laminated film of a titanium (Ti) film and a palladium(Pd) film on the titanium film can be particularly suitably used as themetal film ME1.

FIG. 8 is a plan view showing a principal part of the semiconductordevice (semiconductor chip) CP according to this embodiment, and a planview of a formation region of the pad PD and the metal film ME is shown.The pad PD and the metal film ME which are shown in the cross-sectionalview of FIG. 7 mentioned above substantially correspond to across-sectional view taken at a position of line A-A of FIG. 8. In FIG.8, the pad PD and the metal film ME are indicated by solid lines, theopening portion OP of the insulating film PV is indicated by a chaindouble-dashed lines, and a wire bonding region WA and a probe contactregion PA are indicated by broken lines (dotted lines). Moreover, FIG. 9is across-sectional view showing a state of bringing a probe (probeneedle) PRB into contact with the probe contact region PA of the metalfilm ME in FIG. 7 at the time of the probe inspection, and across-sectional view corresponding to FIG. 7 mentioned above is shown.Moreover, FIG. 10 is a cross-sectional view showing a state where thewire (bonding wire) BW is bonded to the wire bonding region WA of themetal film ME in FIG. 7, and a cross-sectional view corresponding toFIG. 7 mentioned above is shown. In a similar way to FIG. 7 mentionedabove, also in FIG. 9 and FIG. 10, illustration of the structure belowthe interlayer insulating film IL8 is omitted. Moreover, in thesemiconductor devices PKG1 and PKG2 in FIG. 2 and FIG. 3 mentionedabove, the wire BW is bonded to the metal film ME as in FIG. 10, butillustration of the sealing resin (corresponding to the above-describedsealing portions MR1 and MR2) is omitted in FIG. 10.

As shown in FIG. 9, in the probe inspection step, the probe PRB does notcontact the pad PD, but contacts the metal film ME. Also, as shown inFIG. 10, in the wire bonding step, the above-described wire BW is notbonded to the pad PD, but is bonded to the metal film ME.

In this embodiment, a region on the upper surface of the metal film MEwhich the probe (probe needle) contacts at the time of an electricalcharacteristic test (probe inspection) of the semiconductor chip (or achip region before dicing) will be referred to as the probe contactregion PA. In the probe inspection, the probe contacts the probe contactregion PA on the upper surface of the metal film ME, and a probe mark isformed thereon. Therefore, at a stage before performing the probeinspection, the probe contact region PA can also be regarded as a regionwhich the probe is scheduled to contact in the probe inspection.Moreover, during the probe inspection, the probe contact region PA canalso be regarded as a region which the probe contacts. Furthermore,after the probe inspection is performed, the probe contact region PA canalso be regarded as a region where the probe mark is formed. Note thatthe upper surface of the metal film ME corresponds to the upper surfaceof the metal film ME2.

Moreover, in this embodiment, a region on the metal film ME to which awire (corresponding to the above-described wire BW) is bonded(connected) on the upper surface will be referred to as the wire bondingregion (wire connecting region) WA. In the wire bonding step(corresponding to the above-described Steps S3 and S13) whenmanufacturing the semiconductor package, the wire (BW) is bonded(connected) to the wire bonding region WA on the upper surface of themetal film ME, so that the wire (BW) is bonded (connected) to the wirebonding region WA of the metal film ME in a manufactured semiconductorpackage (corresponding to the above-described semiconductor device PKG).Therefore, at a stage before bonding the wire to the metal film ME, thewire bonding region WA can also be regarded as a region which the wireis scheduled to be bonded. At a stage after the wire is bonded to themetal film ME, the wire bonding region WA can also be regarded as aregion to which the wire is bonded.

FIG. 9 shows a state of bringing the probe PRB into contact with themetal film ME at the time of the probe inspection. The probe is broughtinto contact with the probe contact region PA on the upper surface ofthe metal film ME, whereby an electrical test (probe inspection) can beperformed. Moreover, FIG. 10 shows a state where the wire BW iselectrically connected to the metal film ME, and the wire BW is bondedand electrically connected to the wire bonding region WA on the uppersurface of the metal film ME.

The probe contact region PA and the wire bonding region WA are shown inFIG. 7 and FIG. 8. The probe contact region PA and the wire bondingregion WA are plane regions different from each other, and do notoverlap each other in plan view. Therefore, in the probe inspection, theprobe contacts the probe contact region PA of the metal film ME and theprobe mark is formed. Meanwhile, the probe does not contact the wirebonding region WA of the metal film ME, and the probe mark is notformed. Moreover, in a wire bonding step (corresponding to theabove-described Steps S3 and S13), a wire (corresponding to theabove-described wire BW) is bonded to the wire bonding region WA of themetal film MA, but the wire (corresponding to the above-described wireBW) is not bonded to the probe contact region PA of the metal film ME.Each of the probe contact region PA and the wire bonding region WA isincluded in the metal film ME in plan view, and moreover, is included inthe pad PD in plan view.

Note that the reason why the probe contact region PA and the wirebonding region WA are made to be different plane regions is as follows.That is, in the probe inspection, the probe is pressed against the probecontact region PA on the upper surface of the metal film ME to performthe electrical inspection. Therefore, when the probe inspection isperformed, the probe mark is formed in the probe contact region PA ofthe metal film ME. On the upper surface of the metal film ME, planarityis lowered in the region on which the probe mark is formed. Therefore,when the wire (BW) is attempted to be bonded to the region where theprobe mark is formed on the upper surface of the metal film ME in thewire bonding step, it is apprehended that the bonding strength of thewire (BW) may decrease. Therefore, desirably, the wire (BW) is bonded tothe region where the probe mark is not formed on the upper surface ofthe metal film ME, and in order to enable this configuration, the probecontact region PA and the wire bonding region WA are made to bedifferent plane regions in this embodiment. In this way, in the probeinspection, the probe contacts the probe contact region PA of the metalfilm ME and the probe mark is formed, but in the wire bonding step, thewire (BW) can be bonded to the wire bonding region WA where the probemark is not formed. Hence, since the bonding strength of the wire (BW)can be enhanced, reliability of the connection of the wire (BW) can beenhanced, and eventually, reliability of the semiconductor package canbe enhanced.

In this embodiment, in plan view, the wire bonding region WA does notoverlap the insulating film PV, but overlaps the opening portion OP ofthe insulating film PV, and is included in the opening portion OP of theinsulating film PV. That is, the wire bonding region WA is present inthe first portion MEa of the metal film ME, and the wire BW is bonded tothe first portion MEa of the metal film ME. Therefore, below the wirebonding region WA, the metal film ME and the pad PD located thereunderare disposed, but the insulating film PV is not disposed, and theinsulating film PV is not interposed between the metal film ME and thepad PD below the wire bonding region WA. That is, in plan view, thoughthe whole of the wire bonding region WA overlaps the metal film ME andthe pad PD, the wire bonding region WA does not overlap the insulatingfilm PV.

Moreover, in this embodiment, in plan view, the probe contact region PAdoes not overlap the opening portion OP of the insulating film PV, butoverlaps the insulating film PV, and is included in the insulating filmPV. That is, the probe contact region PA is present in the secondportion MEb of the metal film ME, and the probe contacts the secondportion MEb of the metal film ME in the probe inspection, and the probemark is formed. Therefore, below the probe contact region PA, the metalfilm ME, the insulating film PV located thereunder, and the pad PDlocated thereunder are disposed, and the insulating film PV isinterposed between the metal film ME and the pad PD below the probecontact region PA. That is, in plan view, the whole of the probe contactregion PA overlaps the metal film ME, the insulating film PV and the padPD.

As described above, in this embodiment, in the probe inspection, theprobe contacts the second portion MEb of the metal film ME, which islocated on the insulating film PV, and the probe mark is formed. Also,in the wire bonding step, the wire BW is bonded to the first portion MEaof the metal film ME, which is located on the pad PD exposed from theopening portion OP of the insulating film PV.

FIG. 8 shows a case where each plane shape of the metal film ME and thepad PD is rectangular, in which the probe contact region PA and the wirebonding region WA are arrayed in a long-side direction (lateraldirection in FIG. 8) of the metal film ME. For example, the long-sidedirection of the metal film ME is a direction substantially parallel tothe upper surface of the semiconductor device CP, and substantiallyperpendicular to a side of the upper surface of the CP (that is, theside that constitutes the outer periphery of the upper surface of thesemiconductor device CP). Moreover, the long-side direction of the metalfilm ME and a long-side direction of the pad PD are substantiallyparallel to each other. Moreover, FIG. 8 shows a case where the planedimension (plane area) of the metal film ME is a little smaller than theplane dimension (plane area) of the pad PD and the metal film ME isincluded in the pad PD in plan view. As another mode, a part of themetal film ME may protrude from the pad PD in plan view.

An example of the dimensions is described below; however, the dimensionsare not limited to this. The long side (lateral dimension in FIG. 8) ofthe metal film ME is, for example, 90 to 115 μm, and a short side(longitudinal dimension in FIG. 8) of the metal film ME is, for example,50 to 60 μm. Moreover, a long side (lateral dimension in FIG. 8) of thepad PD is, for example, 105 to 130 μm, and a short side (longitudinaldimension in FIG. 8) of the pad PD is, for example, 55 to 65 μm.Furthermore, a plane shape of the opening portion OP is preferablyrectangular or square, and a length of each side thereof is, forexample, 45 to 55 μm. The wire bonding region WA is a substantiallycircular region with a diameter of, for example, 35 to 45 μm, and theprobe contact region PA is a substantially circular region with adiameter of, for example, 7 to 12 μm. Moreover, the plane shape of theprobe contact region PA can be other than circular depending on a shapeof the probe for use in the probe inspection.

<Manufacturing Process of Semiconductor Device>

The manufacturing process of the semiconductor device CP according tothis embodiment will be described with reference to FIG. 11 to FIG. 22.FIG. 11 to FIG. 22 are cross-sectional views each showing a principalpart in the manufacturing process of the semiconductor device CPaccording to this embodiment.

First, the semiconductor substrate (semiconductor wafer) SB made ofsingle crystal silicon or the like is prepared, and then a semiconductorelement such as a MISFET is formed on the semiconductor substrate SB byusing a known semiconductor manufacturing technology. For example, asshown in FIG. 11, the element isolation region ST is formed in thesemiconductor substrate SB by using a shallow trench isolation (STI)method, a well region (not shown) is formed in the semiconductorsubstrate SB by using anion implantation method, the gate electrodes GEare formed on the semiconductor substrate SB (well region) with a gateinsulating film interposed therebetween, and the source/drain regions SDare formed in the semiconductor substrate SB (well region) by using theion implantation method. In this way, the MISFET 1 is formed on thesemiconductor substrate SB.

Next, as shown in FIG. 12, the interlayer insulating film IL1 is formedon the semiconductor substrate SB so as to cover the MISFET 1, contactholes are formed in the interlayer insulating film IL1 by using aphotolithography technology and a dry etching technology, and aconductive film is embedded in the contact holes, whereby the plugs V1are formed.

Next, as shown in FIG. 13, the interlayer insulating film IL2 is formedon the interlayer insulating film IL1 in which the plugs V1 areembedded, and then the wiring M1 is embedded in the interlayerinsulating film IL2 by using a single damascene technology. Thereafter,the interlayer insulating film IL3 is formed on the interlayerinsulating film IL2 in which the wiring M1 is embedded, and then thewiring M2 and the via portions V2 are embedded in the interlayerinsulating film IL3 by using a dual damascene technology. Thereafter,the interlayer insulating film IL4 is formed on the interlayerinsulating film IL3 in which the wiring M2 is embedded, and then thewiring M3 and the via portions V3 are embedded in the interlayerinsulating film IL4 by using the dual damascene technology. Thereafter,the interlayer insulating film IL5 is formed on the interlayerinsulating film IL4 in which the wiring M3 is embedded, and then thewiring M4 and the via portions V4 are embedded in the interlayerinsulating film IL5 by using the dual damascene technology. Thereafter,the interlayer insulating film IL6 is formed on the interlayerinsulating film IL5 in which the wiring M4 is embedded, and then thewiring M5 and the via portions V5 are embedded in the interlayerinsulating film IL6 by using the dual damascene technology. Thereafter,the interlayer insulating film IL7 is formed on the interlayerinsulating film IL6 in which the wiring M5 is embedded, and then thewiring M6 and the via portions V6 are embedded in the interlayerinsulating film IL7 by using the dual damascene technology. Thereafter,the interlayer insulating film IL8 is formed on the interlayerinsulating film IL7 in which the wiring M6 is embedded. The respectivethicknesses of the interlayer insulating films IL7 and IL8 are largerthan the respective thicknesses of the interlayer insulating films IL2,IL3, IL4, IL5 and IL6.

Next, the opening portion SH is formed in the interlayer insulating filmIL8 by using the photolithography technology and an etching technology.When the opening portion SH is formed in the interlayer insulating filmIL8, the upper surface of the wiring M6 is exposed on the bottom of theopening portion SH.

Next, the conductive film for the via portion V7 is formed on theinterlayer insulating film IL8 so as to fill the opening portion SH,then the conductive film (conductive film for the via portion V7)outside the opening portion SH is removed by using a chemical mechanicalpolishing (CMP) method, an etch back method or the like, and theconductive film (conductive film for the via portion V7) is left in theopening portion SH. In this way, the via portion V7 composed of theconductive film embedded in the opening portion SH can be formed.

As the interlayer insulating films IL2 to IL8, for example, siliconoxide films can be used; however, low-dielectric-constant films (low-kfilms) are also usable. Here, the low-dielectric-constant film refers toan insulating film whose relative dielectric constant is lower than arelative dielectric constant (=3.8 to 4.3) of silicon oxide (SiO₂), andparticularly, refers to an insulating film whose relative dielectricconstant is lower than 3.3.

Next, as shown in FIG. 14, the barrier conductor film BR1, theAl-containing conductive film AM1 and the barrier conductor film BR2 aresequentially formed on the interlayer insulating film IL8 in which thevia portion V7 is embedded, whereby a laminated film SM of the barrierconductor film BR1, the Al-containing conductive film AM1 located on thebarrier conductor film BR1, and the barrier conductor film BR2 locatedon the Al-containing conductive film AM1 is formed. Each of the barrierconductor film BR1, the Al-containing conductive film AM1 and thebarrier conductor film BR2 can be formed by using a sputtering methodand the like. Note that, in FIG. 14 and in FIGS. 15 to 22 to bementioned later, illustration of the structure below the interlayerinsulating film IL8 is omitted in order to simplify the drawings.

Next, as shown in FIG. 15, the laminated film SM is patterned by usingthe photolithography technology and the etching technology, whereby thepad PD is formed. That is, a photoresist pattern (not shown) is formedon the laminated film SM by using the photolithography technology, andthen the laminated film SM is etched with using the photoresist patternas an etching mask, whereby the laminated film SM is patterned, and thepad PD composed of the patterned laminated film SM is formed.Thereafter, the photoresist pattern is removed, and FIG. 15 shows thisstage. At this stage, the whole of the pad PD is composed of thelaminated film of the barrier conductor film BR1, the Al-containingconductive film AM1 located on the barrier conductor film BR1, and thebarrier conductor film BR2 located on the Al-containing conductive filmAM1. Note that, when patterning the laminated film SM, not only the padPD but also the wiring in the same layer as the pad PD can be formed,and in that case, the wiring in the same layer as the pad PD is formedon the interlayer insulating film IL8.

Moreover, here, the case of forming the via portion V7 and the pad PDseparately from each other has been illustrated and described; however,as another mode, it is also possible to form the via portion V7integrally with the pad PD. In that case, the laminated film SM isformed on the interlayer insulating film IL8 including the inside of theopening portion SH in a state where the via portion V7 is not formed,and then the laminated film SM is patterned by using thephotolithography technology and the etching technology, whereby the padPD is formed. In this way, the pad PD and the via portion V7 composed ofthe patterned laminated film SM are formed integrally with each other.

Next, as shown in FIG. 16, the insulating film PV is formed on theinterlayer insulating film IL8 so as to cover the pad PD. As theinsulating film PV, a single-layer insulating film or a laminatedinsulating film formed by laminating a plurality of insulating films onone another can be used. For example, a silicon oxide film or a siliconnitride film or a laminated film of these can be used as the insulatingfilm PV. Moreover, as the insulating film PV, a resin film made ofpolyimide resin or the like (that is, an organic insulating film) canalso be used. FIG. 16 shows a case where the insulating film PV iscomposed of the laminated film (laminated insulating film) of theinsulating film PV1 and the insulating film PV2 on the insulating filmPV1. The insulating film PV1 is preferably a silicon nitride film, andthe insulating film PV2 is preferably a silicon oxide film.

Next, as shown in FIG. 17, the opening portion OP is formed in theinsulating film PV. For example, a photoresist pattern (not shown) isformed on the insulating film PV by using the photolithographytechnology, and then the insulating film PV is etched with using thephotoresist pattern as an etching mask, whereby the opening portion OPcan be formed in the insulating film PV. Thereafter, the photoresistpattern is removed, and FIG. 17 shows this stage. The opening portion OPof the insulating film PV is included in the pad PD in plan view.

In the etching step of forming the opening portion OP in the insulatingfilm PV, the opening portion OP is formed in the insulating film PV byetching the insulating film PV to expose the barrier conductor film BR2of the pad PD from the opening portion OP, and the barrier conductorfilm BR2 exposed from the opening portion OP is then removed by etching,whereby the Al-containing conductive film AM1 of the pad PD can beexposed from the opening portion OP. That is, in a region that overlapsthe opening portion OP in plan view, not only the insulating film PV butalso the barrier conductor film BR2 that has constituted the pad PD isetched and removed, and accordingly, the upper surface of theAl-containing conductive film AM1 that constitutes the pad PD isexposed. Meanwhile, in a region covered with the insulating film PV evenafter the opening portion OP is formed, the barrier conductor film BR2remains without being removed.

Next, as shown in FIG. 18, the metal film ME1 is formed on theinsulating film PV including the sidewall of the opening portion OP andthe surface of the pad PD (that is, the Al-containing conductive filmAM1) exposed from the opening portion OP. The metal film ME1 is made ofthe above-mentioned material, and for example, a single-layer film oftitanium (Ti) or a laminated film of a titanium (Ti) film and apalladium (Pd) film located on the titanium film can be suitably used asthe metal film ME1. The metal film ME1 can be formed by using, forexample, an electroless plating method or the sputtering method. Whenthe metal film ME1 is formed, the upper surface of the pad PD, which isexposed from the opening portion OP, is covered with the metal film ME1,and is brought into contact with the metal film ME1.

Next, as shown in FIG. 19, the photoresist layer (photoresist pattern)RP1 is formed on the metal film ME1 by using the photolithographytechnology. The photoresist layer RP1 has an opening portion OP1 in aregion where the metal film ME is scheduled to be formed.

A plane dimension (plane area) of the opening portion OP1 of thephotoresist layer RP1 is larger than the plane dimension (plane area) ofthe opening portion OP of the insulating film PV, and the openingportion OP1 of the photoresist layer RP1 is included in the openingportion OP of the insulating film PV in plan view. Therefore, thesidewall (inner wall) of the opening portion OP of the insulating filmPV is located inside the opening portion OP1 of the photoresist layerRP1 in plan view, and not only a portion of the metal film ME1 locatedon the pad PD but also a portion of the metal film ME1 located on theinsulating film PV is exposed from the opening portion OP1 of thephotoresist layer RP1.

Next, as shown in FIG. 20, by using the plating method, the metal filmME2 is formed on the metal film ME1 exposed from the opening portion OP1of the photoresist layer RP1. Therefore, the metal film ME2 is a platedlayer. It is preferable to use an electroplating method as the platingmethod for forming the metal film ME2. When forming the metal film ME2by the electroplating method, the metal film ME1 can be used as a seedlayer (power-feeding conductor layer). Since the metal film ME2 isformed by the electroplating method, the metal film ME2 is selectivelyformed on the portion of the metal film ME1 exposed from the openingportion OP1 of the photoresist layer RP1. Therefore, the metal film ME2is selectively formed in the opening portion OP1 of the photoresistlayer RP1. The metal film ME2 is made of the above-mentioned material,and a gold (Au) film can be suitably used as the metal film ME2.

Next, as shown in FIG. 21, the photoresist layer RP1 is removed.Thereafter, as shown in FIG. 22, the portion of the metal film ME1exposed without being covered with the metal film ME2 is removed byetching or the like. In this way, the portion of the metal film ME1exposed without being covered with the metal film ME2 is removed;however, the portion of the metal film ME1 covered with the metal filmME2, that is, the portion of the metal film ME1 located under the metalfilm ME2 remains without being removed.

In this way, as shown in FIG. 22, the metal film ME can be formed. Themetal film ME is formed of the metal film ME2 and the metal film ME1under the metal film ME2. Since the thickness of the metal film ME1 issmaller than the thickness of the metal film ME2, the metal film ME ismainly formed of the metal film ME2.

Moreover, here, the description has been given of the case ofselectively forming the metal film ME2 in the opening portion OP1 of thephotoresist layer RP1. As another mode, after the metal film ME1 isformed, the metal film ME2 is formed on the whole of the upper surfaceof the metal film ME1 without forming the photoresist layer RP1, andthereafter, a laminated film of the metal film ME1 and the metal filmME2 is patterned by using the photolithography technology and theetching technology, whereby the metal film ME can be formed.

As described above, a wafer process is implemented for the semiconductorsubstrate SB as shown in FIG. 11 to FIG. 22. The wafer process is alsocalled a pre-process. Here, the wafer process generally refers to aprocess of forming a variety of elements (the MISFET and the like)wiring layers (here, the wirings M1 to M6) and pad electrodes (here, thepads PD) on the main surface of the semiconductor wafer (thesemiconductor substrate SB), forming a surface protection film (here,the insulating film PV), and then achieving a state where an electricaltest of each of a plurality of chip regions formed on the semiconductorwafer is enabled with the probe and the like. Each chip region of thesemiconductor wafer corresponds to a region from which one semiconductorchip (here, the semiconductor device CP) is acquired in thesemiconductor wafer.

Next, the probe inspection (probe test, wafer test) is performed usingthe metal film ME connected to the pad PD, whereby the electrical testof each chip region of the semiconductor wafer (semiconductor substrateSB) is performed. Specifically, in each chip region of the semiconductorwafer (semiconductor substrate SB), as shown in FIG. 9 mentioned above,the probe PRB for the inspection (test) is pressed against the probecontact region PA of the metal film ME to perform an electricalinspection (electrical test) of each chip region. In other words, theprobe PRB is not brought into direct contact with the pad PD, but theprobe PRB is brought into contact with the metal film ME (probe contactregion PA), so that the probe PRB is electrically connected to the padPD through the metal film ME and the electrical inspection (electricaltest) of each chip region is performed. On the basis of a result of thisprobe inspection, it can be determined whether each chip region of thesemiconductor wafer (semiconductor substrate SB) is acceptable ordefective, or alternatively, data of a measurement result of the probeinspection is fed back to each manufacturing step, whereby yield andreliability of the semiconductor device can be enhanced. Note that eachchip region of the semiconductor wafer corresponds to the region fromwhich one semiconductor chip (semiconductor chip corresponding to thesemiconductor device CP) is acquired in the semiconductor wafer.

Thereafter, a back surface of the semiconductor substrate SB is groundor polished according to needs to reduce the thickness of thesemiconductor substrate SB (a back-grinding step), and then, thesemiconductor substrate SB is diced (cut) together with the laminatedstructure on the semiconductor substrate SB (dicing step). At this time,the semiconductor substrate SB and the laminated structure on thesemiconductor substrate SB are diced (cut) along a scribing region by adicing blade (not shown). In this way, the semiconductor substrate SBand the laminated structure on the semiconductor substrate SB aredivided (singulated) into the plurality of semiconductor chips.

In this way, the semiconductor device (semiconductor chip) CP can bemanufactured.

Examination Example

A description will be given of a semiconductor device (semiconductorchip) CP100 according to an examination example examined by theinventors of the present invention with reference to FIG. 23 to FIG. 26.FIG. 23 is a cross-sectional view showing a principal part of thesemiconductor device CP100 according to the examination example examinedby the inventors of the present invention, and corresponds to theabove-mentioned FIG. 7 of the embodiment. Moreover, FIG. 24 is across-sectional view showing a state of bringing the probe PRB intocontact with a probe contact region PA100 of a metal film ME100 in FIG.23 at the time of the probe inspection, and corresponds to theabove-mentioned FIG. 9. Furthermore, FIG. 25 is a cross-sectional viewshowing a state where the wire BW is bonded to a wire bonding regionWA100 of the metal film ME100 in FIG. 23, and corresponds to theabove-mentioned FIG. 10. In a similar way to FIG. 7, FIG. 9 and FIG. 10mentioned above, illustration of a structure below the interlayerinsulating film IL8 is omitted also in FIG. 23 to FIG. 25. Moreover,FIG. 26 is a plan view showing a principal part of the semiconductordevice CP100 according to the examination example, and corresponds tothe above-mentioned FIG. 8. A pad PD100 and the metal film ME100 shownin the cross-sectional views of FIG. 23 to FIG. 25 substantiallycorrespond to a cross-sectional view taken at a position of line B-B ofFIG. 26.

In the semiconductor device CP100 according to the examination example,though a plane dimension (plane area) of the pad PD100 corresponding tothe above-described pad PD is substantially equal to that of theabove-described pad PD, a plane dimension of an opening portion OP100 ofan insulating film PV100, which exposes the pad PD100, is considerablylarger than the plane dimension of the above-described opening portionOP of the above-described insulating film PV, and most of the pad PD100is exposed from the opening portion OP100 of the insulating film PV100.The insulating film PV100 corresponds to the insulating film PV, and iscomposed of, for example, a laminated film of an insulating film PV101corresponding to the above-described insulating film PV1 and aninsulating film PV102 corresponding to the above-described insulatingfilm PV2.

In the semiconductor device CP100 according to the examination example,the metal film ME100 corresponding to the above-described metal film MEis formed on the pad PD100 exposed from the opening portion OP100 of theinsulating film PV100. The metal film ME100 is composed of a laminatedfilm of a metal film ME101 corresponding to the above-described metalfilm ME1 and a metal film ME102 formed on the metal film ME101 andcorresponding to the above-described metal film ME2. Around the openingportion OP100, the metal film ME100 slightly hangs on the insulatingfilm PV100; however, a plane dimension of the portion of the metal filmME100 located on the insulating film PV100 is considerably smaller thana plane dimension of the portion of the above-described metal film MElocated on the insulating film PV.

In the semiconductor device CP according to the embodiment, the wirebonding region WA is included in the opening portion OP of theinsulating film PV as mentioned above, and the probe contact region PAdoes not overlap the opening portion OP of the insulating film PV, butoverlaps the insulating film PV. That is, in the semiconductor device CPaccording to the embodiment described above, as shown in theabove-mentioned FIG. 10, the wire BW is bonded to the portion of themetal film ME located on the pad PD exposed from the opening portion OPof the insulating film PV, and the probe PRB contacts the portion of themetal film ME located on the insulating film PV in the probe inspectionand the probe mark is formed thereon as shown in the above-mentionedFIG. 9.

Unlike the semiconductor device CP according to the embodiment describedabove, in the semiconductor device CP100 according to the examinationexample, both of the wire bonding region WA100 corresponding to theabove-described wire bonding region WA and the probe contact regionPA100 corresponding to the above-described probe contact region PA areincluded in the opening portion OP100 of the insulating film PV100.

That is, in the case of the semiconductor device CP100 according to theexamination example, as shown in FIG. 24, the probe PRB contacts theportion of the metal film ME100 located on the pad PD100 exposed fromthe opening portion OP100 of the insulating film PV100 in the probeinspection step, and the probe mark is formed. Furthermore, in the caseof the semiconductor device CP100 according to the examination example,as shown in FIG. 25, the wire BW is bonded to the portion of the metalfilm ME100 located on the pad PD100 exposed from the opening portionOP100 of the insulating film PV100 in the wire bonding step.

As a result of the examination of the inventors of the presentinvention, it has been found out that the following problems occur inthe case of the examination example in FIG. 23 to FIG. 26.

That is, since the probe PRB is pressed against the probe contactregions PA and PA100 of the metal films ME and ME100 in the probeinspection step, this probe PRB applies a strong external force(pressure) to the probe contact regions PA and PA100 of the metal filmsME and ME100. In the case of the semiconductor device CP100 according tothe examination example, the external force (pressure) applied to theprobe contact region PA100 of the metal film ME100 is transmitted fromthe metal film ME100 to the pad PD100 located thereunder, causing anapprehension that the pad PD100 may be deformed. Moreover, the externalforce (pressure) is also transmitted to the insulating film (here, theinsulating film IL8) located under the pad PD100, also causing anapprehension to adversely affect the insulating film located under thepad PD100. For example, it is apprehended that a crack may occur in theinsulating film (interlayer insulating film IL8) located under the padPD100. When the crack occurs in the insulating film (interlayerinsulating film IL8) located under the pad PD100, conduction between thepad PD100 and the wiring M6, which are originally insulated from eachother, is concerned. Accordingly, it is apprehended that the reliabilityof the semiconductor device may decrease (the conduction which is causedby the crack needs to be prevented also between the respective wiringlayers which are insulated from one another). Besides, it is apprehendedthat moisture may enter from the crack to lower the reliability of thesemiconductor device. Moreover, it is apprehended that the pad PD100 maybe delaminated from the crack as a starting point due to a thermalstress after the semiconductor package is manufactured, thereby loweringthe reliability of the semiconductor device. Moreover, it is apprehendedthat deformation of the pad PD100 may lead to the decrease of thereliability of the semiconductor device.

Therefore, in order to enhance the reliability of the semiconductordevice, it is desired that the pad and the insulating film located underthe pad be prevented from being adversely affected even if the probe isbrought into contact with the metal film connected to the pad in theprobe inspection.

<Main Features and Effects>

The semiconductor device CP according to this embodiment includes: thesemiconductor substrate SB; the interlayer insulating film IL8 (firstinterlayer insulating film) formed on the semiconductor substrate SB;the pad PD formed on the interlayer insulating film IL8; the insulatingfilm PV (second insulating film) formed on the interlayer insulatingfilm IL8 so as to cover the pad PD; and the opening portion OP that isformed in the insulating film PV and exposes a part of the pad PD. Thesemiconductor device CP according to this embodiment further includesthe metal film ME which is formed on the pad PD exposed from the openingportion OP and on the insulating film PV and is electrically connectedto the pad PD. The metal film ME integrally includes the first portionMEa located on the pad PD exposed from the opening portion OP and thesecond portion MEb located on the insulating film PV.

One of main features of this embodiment is that the upper surface of themetal film ME has the wire bonding region WA (first region) for bondingthe wire to the metal film ME and the probe contact region PA (secondregion) for bringing the probe into contact with the metal film ME, thewire bonding region WA is located on the first portion MEa of the metalfilm ME, and the probe contact region PA is located on the secondportion MEb of the metal film ME. In this way, it is possible tosuppress or prevent the external force (pressure) applied from the probeto the probe contact region PA of the metal film ME at the time of theprobe inspection from adversely affecting the pad PD and the insulatingfilm located below the pad PD, and the reliability of the semiconductordevice can be enhanced. Hereinafter, this will be specificallydescribed.

In the case of the examination example in FIGS. 23 to 26 mentionedabove, not only the wire bonding region WA100 but also the probe contactregion PA100 is located on the metal film ME100 on the pad PD100 exposedfrom the opening portion OP100. Therefore, the external force (pressure)applied from the probe PRB to the probe contact region PA100 of themetal film ME100 at the time of the probe inspection is prone to betransmitted from the metal film ME100 to the pad PD100 locatedthereunder, and further, is also prone to be transmitted to theinsulating film under the pad PD100. Accordingly, it is apprehended thatthe external force (pressure) may adversely affect the pad PD100 and theinsulating film under the pad PD100.

In contrast, in this embodiment, the metal film ME integrally includesthe first portion MEa located on the pad PD exposed from the openingportion OP of the insulating film PV and the second portion MEb locatedon the insulating film PV, and the probe contact region PA is located onthe second portion MEb of the metal film ME. Therefore, below the probecontact region PA, the metal film ME, the insulating film PV, the pad PDand the interlayer insulating film IL8 are present in this order, andthe insulating film PV is interposed between the pad PD and the metalfilm ME below the probe contact region PA. Therefore, the external force(pressure) applied from the probe PRB to the probe contact region PA ofthe metal film ME at the time of the probe inspection is transmittedfrom the metal film ME to the insulating film PV located thereunder, butis transmitted to the pad PD after being buffered or blocked to someextent by this insulating film PV. The external force (pressure)transmitted to the pad PD located under the probe contact region PA isreduced by the amount buffered or blocked by the insulating film PV, andthe external force (pressure) transmitted to the insulating film (here,the interlayer insulating film IL8) located under the pad PD is furtherreduced.

That is, if it is assumed that the external forces (pressures) appliedfrom the probe PRB to the probe contact regions PA and PA100 of themetal films ME and ME100 at the time of the probe inspection areidentical to each other between this embodiment and the above-describedexamination example, the external force (pressure) transmitted to thepad and the interlayer insulating film IL8 located thereunder is reducedin this embodiment compared with the examination example because theexternal force (pressure) is buffered or blocked by the insulating filmPV in this embodiment.

Therefore, in this embodiment, it is possible to suppress or prevent theexternal force (pressure) applied from the probe PRB to the probecontact region PA of the metal film ME at the time of the probeinspection from adversely affecting the pad PD and the insulating filmbelow the pad PD. For example, it is possible to suppress or prevent thedeformation of the pad PD, and it is possible to suppress or prevent theoccurrence of the crack in the insulating film (interlayer insulatingfilm IL8) below the pad PD. Hence, the reliability of the semiconductordevice can be enhanced.

Moreover, in the above-described examination example, it is alsoconceivable to thicken the pad PD100 and the metal film ME100 for thepurpose of preventing the external force (pressure) from the probe PRBfrom adversely affecting the interlayer insulating film IL8 locatedunder the pad PD100 at the time of the probe inspection. If the padPD100 and the metal film ME100 are thickened, the external force(pressure) applied from the probe PRB to the probe contact region PA100of the metal film ME100 at the time of the probe inspection is likely tobe buffered by the metal film ME100 and the pad PD100, and accordingly,the external force (pressure) becomes difficult to be transmitted to theinterlayer insulating film IL8 located under the pad PD100.

However, by thickening the pad PD100 in the above-described examinationexample, the pad PD100 becomes prone to be deformed in a curing stage(cooling stage) of the sealing resin in the molding step (correspondingto the above-described Steps S4 and S14) when manufacturing thesemiconductor package, and the crack becomes prone to occur in theinsulating film PV100 due to the deformation of the pad PD100.Therefore, it is not very advisable to thicken the pad PD100 in theabove-described examination example.

Moreover, it is apprehended that fluctuations (deviations from a designvalue) of the thickness of the metal film ME100 may be increased bythickening the metal film ME100 in the above-described examinationexample. However, since it is necessary to set conditions of the wirebonding step in accordance with the thickness of the metal film ME100 towhich the wire BW is connected, it is desirable that the thickness ofthe metal film ME100 does not deviate from the design value as much aspossible. Moreover, it is apprehended that thickening the metal filmME100 leads to the increase in the manufacturing cost of thesemiconductor device, and thickening the metal film ME100 greatlyaffects the increase in the manufacturing cost particularly when themetal film ME100 contains a noble metal film such as a gold film.Therefore, it is not very advisable to thicken the metal film ME100 inthe above-described examination example.

In contrast, in this embodiment, the insulating film PV is interposedbetween the metal film ME and the pad PD below the probe contact regionPA. Therefore, in comparison with the above-described examinationexample, a distance from the probe contact region PA on the uppersurface of the metal film ME to the upper surface of the interlayerinsulating film IL8 under the pad PD can be increased by the amount ofthe thickness of the insulating film PV in this embodiment. In otherwords, in this embodiment, even if the pad PD and the metal film ME arenot thickened, since the insulating film PV is allowed to be presentbelow the probe contact region PA, it is possible to increase a distancefrom a tip end of the probe PRB to the upper surface of the interlayerinsulating film IL8 located under the pad PD when the probe PRB ispressed against the probe contact region PA of the metal film ME. Inthis way, even if the pad PD and the metal film ME are not thickened,the external force (pressure) applied from the probe PRB to the probecontact region PA of the metal film ME at the time of the probeinspection is less likely to be transmitted to the interlayer insulatingfilm IL8 located under the pad PD. Accordingly, it is possible tosuppress or prevent the interlayer insulating film IL8 located under thepad PD from being adversely affected. Hence, it is possible to preventthe occurrence of the crack or the like in the interlayer insulatingfilm IL8 located under the pad PD at the time of the probe inspection,while avoiding such an adverse effect mentioned above which may occurwhen the pad PD and the metal film ME are thickened too much.

Moreover, in this embodiment, the wire bonding region WA is not locatedon the second portion MEb of the metal film ME on the insulating filmPV, but is located on the first portion MEa of the metal film ME on thepad PD exposed from the opening portion OP of the insulating film PV.Unlike this embodiment, when the wire BW is bonded to the second portionMEb of the metal film ME located on the insulating film PV, theinsulating film PV is interposed between the metal film ME and the padPD below the wire BW. Accordingly, a conduction path from the wire BW tothe pad PD is elongated, and a resistance (electrical resistance)between the wire BW and the pad PD is increased. In contrast, in thisembodiment, the wire is bonded to the first portion MEa of the metalfilm ME located on the pad PD exposed from the opening portion OP of theinsulating film PV. Accordingly, the conduction path from the wire BW tothe pad PD can be shortened, and the resistance (electrical resistance)between the wire BW and the pad PD can be suppressed. Hence, performanceof the semiconductor device can be enhanced.

Meanwhile, in this embodiment, since the probe PRB is brought intocontact with the second portion MEb on the metal film ME located on theinsulating film PV at the time of the probe inspection, a resistancefrom the probe PRB to the pad PD is increased. However, this increasedoes not affect actual use of the semiconductor device CP, andaccordingly, is not regarded as a problem. When the manufacturedsemiconductor device CP is actually used, the second portion MEb on theinsulating film PV does not need to function as a conduction path of asignal, and it is the first portion MEa of the metal film ME thatfunctions as the conduction path of the signal, that is, the conductionpath between the wire BW and the pad PD.

As described above, in this embodiment, the metal film ME is formed onthe pad PD exposed from the opening portion OP of the insulating film PVand on the insulating film PV, and the probe PRB is brought into contactwith the second portion MEb of this metal film ME located on theinsulating film PV in the probe inspection, and the wire BW is bonded tothe first portion MEa located on the pad PD exposed from the openingportion OP in the wire bonding step. In this way, the wire BW and thepad PD can be electrically connected to each other through the metalfilm ME with a low resistance, and in addition, it is possible toprevent the external force (pressure) from the probe PRB from adverselyaffecting the pad PD and the interlayer insulating film IL8 locatedunder the pad PD at the time of the probe inspection.

Moreover, in comparison with the manufacturing process of thesemiconductor device CP100 according to the above-described examinationexample, the manufacturing process of the semiconductor device CPaccording to this embodiment does not need to increase the number ofmanufacturing steps. Accordingly, the number of manufacturing steps ofthe semiconductor device can be suppressed, and the manufacturing costof the semiconductor device can be suppressed.

Moreover, the insulating film PV present under the metal film ME has afunction to suppress or block the transmission of the external force(pressure), which is applied from the probe PRB to the probe contactregion PA of the metal film ME at the time of the probe inspection, tothe pad PD and the interlayer insulating film IL8 located under the padPD, and a magnitude of this function is changeable depending on thematerial of the insulating film PV. Therefore, it is more preferable toselect the material of the insulating film PV so as to increase thisfunction, and the insulating film PV preferably includes a hard materialfilm from this viewpoint.

Therefore, the insulating film PV preferably includes an inorganicinsulating film, that is, is preferably a single-layer film of aninorganic insulating film or a laminated film of an inorganic insulatingfilm. In other words, it is preferable that the insulating film PV is aninorganic insulating film or a laminated film including an inorganicinsulating film. Since the inorganic insulating film is a relativelyhard material film, the inorganic insulating film has a large functionto suppress or block the transmission of the external force (pressure).When the insulating film PV includes the inorganic insulating film, itis possible to more accurately suppress the external force (pressure)applied from the probe PRB to the probe contact region PA of the metalfilm ME at the time of the probe inspection from being transmitted tothe pad PD and the interlayer insulating film IL8 located under the padPD, and the deformation of the pad PD and the occurrence of crack of theinterlayer insulating film IL8 located under the pad PD can be moreaccurately suppressed or prevented.

Moreover, among such inorganic insulating films, a silicon nitride filmis particularly hard, and accordingly, has a particularly large functionto suppress or block the transmission of the external force (pressure).Therefore, the insulating film PV more preferably includes a siliconnitride film, that is, is more preferably a single-layer film or alaminated film including a silicon nitride film. In other words, it ismore preferable that the insulating film PV is a silicon nitride film orthe laminated film including a silicon nitride film. When the insulatingfilm PV includes a silicon nitride film, it is possible to furtheraccurately suppress the external force (pressure) applied from the probePRB to the probe contact region PA of the metal film ME at the time ofthe probe inspection from being transmitted to the pad PD and theinterlayer insulating film IL8 located under the pad PD, and thedeformation of the pad PD and the occurrence of crack of the interlayerinsulating film IL8 located under the pad PD can be further accuratelysuppressed or prevented.

As the insulating film PV, a laminated film of a silicon nitride filmand a silicon oxide film located on the silicon nitride film can beparticularly suitably used. In this case, in FIG. 7, the insulating filmPV is composed of the laminated film of the insulating film PV1 made ofa silicon nitride film and the insulating film PV2 formed on theinsulating film PV1 and made of a silicon oxide film. In this way, thefunction of the insulating film PV as the passivation film can beenhanced, and further an effect of suppressing the external force(pressure), which is applied from the probe PRB to the probe contactregion PA of the metal film ME at the time of the probe inspection, frombeing transmitted to the pad PD and the interlayer insulating film IL8under the pad PD can also be enhanced.

Moreover, in this embodiment, the following effects can also beobtained.

FIG. 27 is a plan view showing a principal part of the semiconductordevice CP according to this embodiment, and a plan view of the metalfilm ME is shown. Moreover, FIG. 28 is a plan view showing a principalpart of the semiconductor device CP100 according to the examinationexample, and a plan view of the metal film ME100 is shown. In FIG. 27and FIG. 28, each of the metal films ME and ME100 and dents KB and KB100is indicated by a solid line, each of the opening portions OP and OP100of the insulating films PV and PV100 is indicated by a chaindouble-dashed lines, each of the wire bonding regions WA and WA100 andthe probe contact regions PA and PA100 is indicated by a broken line(dotted line), and the illustration of the pads PD and PD100 is omitted.In FIG. 27, the solid line denoted by reference symbol KB is a positionof a sidewall of the dent KB in the metal film ME, and in FIG. 28, thesolid line denoted by reference symbol KB100 is a position of a sidewallof the dent KB100 in the metal film ME100.

In the case of the above-described examination example, the wire bondingregion WA100 and the probe contact region PA100 are included in theopening portion OP100 in plan view. That is, in the metal film ME100,the dent (dent portion, recessed portion) KB100 formed by the openingportion OP100 of the insulating film PV100 is present (refer to FIG. 23and FIG. 28). Furthermore, the wire bonding region WA100 and the probecontact region PA100 are present on a bottom surface of the dent KB100in the metal film ME100, the probe PRB is brought into contact with thebottom surface of the dent KB100 at the time of the probe inspection,and the wire BW is bonded thereto at the time of the wire bonding.

However, as can be seen from FIG. 23 and FIG. 28, a plane dimension ofthe dent KB100 becomes smaller than the plane dimension of the openingportion OP100 of the insulating film PV approximately by the amount ofthe thickness of the metal film ME100. Moreover, on the upper surface ofthe metal film ME100, a region near a sidewall of the dent KB100 (thatis, a step difference portion of the metal film ME100) is a region withwhich it is difficult to bring the probe PRB into contact, andaccordingly, the probe contact region PA100 needs to be separated tosome extent from the sidewall of the dent KB100. Therefore, in the caseof the examination example, when the plane dimension of the dent KB100is attempted to be ensured so that both of the wire bonding region WA100and the probe contact region PA100 can be disposed therein, the planedimension of the opening portion OP100 becomes considerably large, withthe result that the plane dimension of the metal film ME100 also becomesconsiderably large. It is apprehended that this may cause the increasein the plane dimension of the semiconductor device CP100.

In contrast, in this embodiment, the dent (dent portion, recessedportion) KB formed by the opening portion OP of the insulating film PVis present in the first portion MEa of the metal film ME, the wirebonding region WA is present on a bottom surface of the dent KB, and thewire BW is bonded to the bottom surface of the dent KB at the time ofthe wiring bonding (refer to FIG. 7, FIG. 10 and FIG. 27). Meanwhile,the second portion MEb of the metal film ME is located on the insulatingfilm PV, and the dent caused by the opening portion OP of the insulatingfilm PV is not formed in the second portion MEb of the metal film ME.Therefore, an upper surface of the second portion MEb of the metal filmME becomes substantially flat, and it becomes easy to dispose the probecontact region PA. From another viewpoint, it is possible to dispose theprobe contact region PA in any region on the upper surface of the secondportion MEb of the metal film ME. In other words, even if the planedimension (plane area) of the second portion MEb of the metal film ME isnot increased to a large extent, the probe contact region PA can beaccurately ensured on the upper surface of the second portion MEb of themetal film ME.

Therefore, when the case of the above-described examination example(FIG. 28) and the case of this embodiment (FIG. 27) are compared witheach other, if it is assumed that the plane dimensions of the metalfilms ME and ME100 are identical to each other, the size of plane region(flat region) of the metal film ME where it is possible to dispose theprobe contact region PA in the case of this embodiment (FIG. 27) islarger than the size of plane region (flat region) of the metal filmME100 where it is possible to dispose the probe contact region PA100 inthe case of the above-described examination example (FIG. 28). Notethat, in FIG. 27 and FIG. 28, the plane regions (flat regions) of themetal films ME and ME100 where it is possible to dispose the probecontact regions PA and PA100 are shown by shading with dots. Therefore,it becomes easier to perform the probe inspection in this embodimentthan in the above-described examination example. From another viewpoint,the metal film ME according to this embodiment can reduce the wholeplane dimension (that is, the plane dimension of the metal film) morewhile enabling more appropriate implementation of the probe inspectionand the wire bonding compared with the metal film ME100 according to theabove-described examination example. Therefore, this embodiment becomesmore advantageous in miniaturization (area reduction) of thesemiconductor device (semiconductor chip) than the above-describedexamination example.

Next, each thickness of the pad PD, the insulating film PV and the metalfilm ME will be described.

When the pad PD is thickened, the pad PD becomes prone to be deformed inthe curing stage (cooling stage) of the sealing resin in the moldingstep (corresponding to the above-described Steps S4 and S14) whenmanufacturing the semiconductor package, and the crack becomes prone tooccur in the insulating film PV due to the deformation of the pad PD.Therefore, it is desirable that the pad PD should not be thickened toomuch. Meanwhile, the insulating film PV has a function to suppress orblock the transmission of the external force (pressure) generated by theprobe PRB, and a magnitude of the function is increased as theinsulating film PV is thickened. Therefore, it is desirable that theinsulating film PV be thickened to some extent. Therefore, preferably, athickness T1 of the insulating film PV is larger than a thickness T2 ofthe pad PD (that is, T1>T2). In this way, while suppressing orpreventing the deformation of the pad PD in the molding step(corresponding to the above-described Steps S4 and S14) whenmanufacturing the semiconductor package, the effect of preventing theexternal force (pressure) from the probe PRB at the time of the probeinspection from adversely affecting the pad PD and the interlayerinsulating film IL8 located under the pad PD can be enhanced.

Meanwhile, if the metal film ME is thinned too much, it becomesdifficult to bond the wire BW thereto, and the wire BW is likely to bebonded well to the metal film ME when the metal film ME has somethickness. Therefore, preferably, a thickness T3 of the metal film ME islarger than the thickness T2 of the pad PD (that is, T3>T2). In thisway, the wire BW can be bonded well to the metal film ME whilesuppressing or preventing the deformation of the pad PD in the moldingstep (corresponding to the above-described Steps S4 and S14) whenmanufacturing the semiconductor package.

Note that the thickness T1 (refer to FIG. 7) of the insulating film PVcorresponds to a thickness of the insulating film PV in the portionsandwiched by the metal film ME and the pad PD. Moreover, the thicknessT2 (refer to FIG. 7) of the pad PD corresponds to a thickness of the padPD in the portion covered with the insulating film PV. Moreover, thethickness T3 (refer to FIG. 7) of the metal film ME corresponds to athickness of the second portion MEb in the portion located on theinsulating film PV.

FIG. 29 and FIG. 30 are tables showing results of investigating thedamage caused on the interlayer insulating film under the pad by theprobe inspection. FIG. 29 shows results of investigating whether somedamage occurs on the insulating film located under the pad PD after theprobe is repeatedly pressed against the probe contact region PA of themetal film ME in the case of adopting the structure (FIG. 7) accordingto this embodiment. Moreover, FIG. 30 shows results of investigatingwhether some damage occurs on the insulating film located under the padPD100 after the probe is repeatedly pressed against the probe contactregion PA100 of the metal film ME100 in the case of adopting thestructure (FIG. 23) according to the above-described examinationexample. Magnitude of force with which the probe is pressed against themetal films ME and ME100 is listed as “stylus pressure” in each table ofFIG. 29 and FIG. 30. Moreover, the number of times that the probe ispressed against the metal films ME and ME100 is listed as “number ofcontacts” in each table of FIG. 29 and FIG. 30. The number of samples isset to 50 (N=50). Furthermore, the case where the sample in which thedamage (crack or the like) occurred in the insulating film located underthe pad was not found among the 50 samples is indicated by a circle mark“0”. Also, the case where one or more samples in which the damage (crackor the like) occurred in the insulating film located under the pad werefound among the 50 samples is indicated by a cross mark (x).

As shown in FIG. 30, when the structure (FIG. 23) according to theabove-described examination example was adopted, the damage was prone tooccur on the insulating film located under the pad PD 100 if the styluspressure of the probe was increased, that is, if the external forceapplied from the probe to the metal film ME100 was increased. Moreover,when the number of times that the probe was pressed against the metalfilm ME100 (the number of contacts) was increased, the damage was proneto occur on the insulating film located under the pad PD100.

In contrast, when the structure (FIG. 7) according to this embodimentwas adopted, the damage hardly occurred on the insulating film locatedunder the pad PD even if the stylus pressure of the probe was increasedand the number of times that the probe was pressed against the metalfilm ME (the number of contacts) was increased as shown in FIG. 29. Itis conceivable that this is because the insulating film PV present underthe metal film ME suppressed or blocked the external force (pressure),which was applied from the probe to the probe contact region PA of themetal film ME, from being transmitted to the region below the insulatingfilm PV. Hence, by adopting the structure (FIG. 7) according to thisembodiment, it is possible to prevent a defect from occurring on theinsulating film located under the pad PD in the probe inspection.

<Modification>

FIG. 31 is a cross-sectional view showing a principal part of amodification of the semiconductor device CP according to thisembodiment, and a cross-sectional view corresponding to FIG. 7 mentionedabove is shown. Moreover, FIG. 32 is a cross-sectional view showing astate of bringing the probe PRB into contact with the probe contactregion PA of the metal film ME in FIG. 31 at the time of the probeinspection, and corresponds to the above-mentioned FIG. 9. Furthermore,FIG. 33 is a cross-sectional view showing a state where the wire BW isbonded to the wire bonding region WA of the metal film ME in FIG. 31,and corresponds to the above-mentioned FIG. 10. In a similar way to FIG.7, FIG. 9 and FIG. 10 are mentioned above, illustration of a structurebelow the interlayer insulating film IL8 is omitted also in FIG. 31 toFIG. 33. Moreover, similarly to the above-mentioned FIG. 10,illustration of the sealing resin is omitted also in FIG. 33.

The modification in FIG. 31 is different from this embodiment in FIG. 7mentioned above in a film structure of the metal film ME. In the case ofthe modification in FIG. 31, the metal film ME2 of the metal films ME1and ME2 which constitute the metal film ME is composed of a laminatedfilm of a nickel (Ni)) film ME2 a and a gold (Au) film ME2 b located onthe nickel film ME2 a. In this case, the metal film ME is composed of alaminated film of the metal film ME1, the nickel film ME2 a located onthe metal film ME1, and the gold film ME2 b located on the nickel filmME2 a, and the uppermost layer of the metal film ME is the gold film ME2b. In other words, the metal film ME is composed of the laminated filmincluding the nickel film ME2 a and the gold film ME2 b located on thenickel film ME2 a, and the uppermost layer of this laminated film is thegold film ME2 b. Each of the nickel film ME2 a and the gold film ME2 bis formed by the electroplating method, and is a plated film(electroplated film). In this case, for example, a single-layer film oftitanium (Ti) or a laminated film of a titanium (Ti) film and a copper(Cu) film located on the titanium film can be suitably used as the metalfilm ME1 to be used as the seed layer. Moreover, the copper (Cu) filmcan be formed not as the seed layer (ME1) but by the electroplatingmethod.

In this case, the copper film as the electroplated film is formed on theseed layer (for example, a titanium film), and the nickel film ME2 a andthe gold film ME2 b are formed on the copper film in order from thebottom, whereby the metal film ME is formed.

In the wire bonding, the wire can be bonded well if the wire is bondedto the gold film. Therefore, the gold film is particularly suitable asthe uppermost layer of the metal film ME. Therefore, in the case of FIG.7 mentioned above, it is truly preferable that a gold film is used asthe metal film ME2 that constitutes the uppermost layer of the metalfilm ME and the wire BW is bonded to the gold film (ME2) (refer to FIG.10). Meanwhile, in the case of the modification in FIG. 31, the goldfilm ME2 b is used as the uppermost layer of the metal film ME, and thewire BW is bonded to the gold film ME2 b (refer to FIG. 33). In thisway, when the wire BW is bonded to the gold film ME2 b of the metal filmME as shown in FIG. 33, the wire BW can be bonded well.

In addition, in the case of the modification in FIG. 31, the nickel filmME2 a is provided under the gold film ME2 b, so that the followingeffect can be further obtained.

That is, since nickel is a hard material, the hard nickel film ME2 a canalso have a function to suppress or block the external force (pressure),which is applied to the gold film ME2 b by the probe PRB, from beingtransmitted to the regions under the metal film ME. In other words,since the gold film is relatively soft, the external force (pressure)applied to the upper surface of the gold film ME2 b by the probe PRB istransmitted to the nickel film ME2 a located under the gold film ME2 bwithout being buffered very much by the gold film ME2 b. Meanwhile,since the nickel film ME2 a is hard (harder than the gold film ME2 b),the external force (pressure) transmitted to the nickel film ME2 a isbuffered or blocked to a considerable extent by the nickel film ME2 a,and is then transmitted to the insulating film PV. Thereafter, theexternal force (pressure) transmitted to the insulating film PV isbuffered or blocked by the insulating film PV. Therefore, in the case ofthe modification in FIG. 31 to FIG. 33, since the nickel film ME2 a isprovided under the gold film ME2 b in addition to the presence of theinsulating film PV under the metal film ME below the probe contactregion PA, the external force (pressure) transmitted to the pad PD andthe interlayer insulating film IL8 located thereunder at the time of theprobe inspection can be further suppressed. Accordingly, in the case ofthe modification in FIG. 31 to FIG. 33, it is possible to moreaccurately suppress or prevent the external force (pressure) appliedfrom the probe PRB to the probe contact region PA of the metal film MEat the time of the probe inspection from adversely affecting the pad PDand the interlayer insulating film IL8 located below the pad PD. Forexample, it is possible to suppress or prevent the deformation of thepad PD and the occurrence of the crack in the interlayer insulating filmIL8 located under the pad PD more accurately. Hence, the reliability ofthe semiconductor device can be further enhanced.

Moreover, in the modification in FIG. 31, when the gold film ME2 b isthinned too much, it is apprehended that nickel (Ni) in the nickel filmME2 a may be diffused into the gold film ME2 b and precipitated on asurface of the gold film ME2 b. When Ni is precipitated on the surfaceof the gold film ME2 b, the precipitated Ni is oxidized, so that itbecomes difficult to bond the wire BW to the metal film ME. Therefore,preferably, a thickness T5 of the gold film ME2 b is larger than athickness T4 of the nickel film ME2 a (that is, T5>T4). Moreover, morepreferably, the thickness T5 of the gold film ME2 b is 2 μm or more(that is T5≥2 μm). In this way, when the wire BW is bonded to the metalfilm ME (more specifically, the gold film ME2 b), the wire can be bondedwell.

Moreover, in order to achieve the function to suppress or block thetransmission of the external force (pressure) from the probe PRB by thenickel film ME2 a, preferably, the thickness T4 of the nickel film ME2 ais 1 μm or more (that is, T4≥1 μm). In this way, it is possible toaccurately suppress or prevent the external force (pressure) appliedfrom the probe PRB to the probe contact region PA of the metal film MEat the time of the probe inspection from adversely affecting the pad PDand the interlayer insulating film IL8 located below the pad PD.

In the foregoing, the invention made by the inventors of the presentinvention has been concretely described based on the embodiments.However, it is needless to say that the present invention is not limitedto the foregoing embodiments and various modifications can be madewithin the scope of the present invention.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor substrate; a first insulating film formed on thesemiconductor substrate; a pad formed on the first insulating film; asecond insulating film formed on the first insulating film so as tocover the pad; an opening portion that is formed in the secondinsulating film and exposes a part of the pad; and a metal film that isformed on the pad exposed from the opening portion and on the secondinsulating film and is electrically connected to the pad, wherein themetal film integrally includes a first portion located on the padexposed from the opening portion and a second portion located on thesecond insulating film, an upper surface of the metal film has a firstregion for bonding a wire to the metal film and a second region forbringing a probe into contact with the metal film, the first region islocated in the first portion of the metal film, and the second region islocated in the second portion of the metal film.
 2. The semiconductordevice according to claim 1, wherein the second insulating film is aninorganic insulating film or a laminated film including an inorganicinsulating film.
 3. The semiconductor device according to claim 1,wherein the second insulating film is a silicon nitride film or alaminated film including a silicon nitride film.
 4. The semiconductordevice according to claim 1, wherein the second insulating film is alaminated film of a silicon nitride film and a silicon oxide filmlocated on the silicon nitride film.
 5. The semiconductor deviceaccording to claim 1, wherein the metal film includes a gold film. 6.The semiconductor device according to claim 1, wherein the metal film iscomposed of a laminated film of a nickel film and a gold film located onthe nickel film, and the gold film is an uppermost layer of thelaminated film.
 7. The semiconductor device according to claim 6,wherein the gold film is thicker than the nickel film.
 8. Thesemiconductor device according to claim 1, wherein the pad is analuminum pad.
 9. The semiconductor device according to claim 1, whereinthe second insulating film and the pad are present below the secondregion, and the pad is present but the second insulating film is notpresent below the first region.
 10. The semiconductor device accordingto claim 1, wherein a thickness of the second insulating film is largerthan a thickness of the pad.
 11. The semiconductor device according toclaim 1, wherein a thickness of the metal film is larger than athickness of the pad.
 12. A method for manufacturing a semiconductordevice, comprising the steps of: (a) preparing a semiconductorsubstrate; (b) forming a first insulating film on a main surface of thesemiconductor substrate; (c) forming a pad on the first insulating film;(d) forming a second insulating film on the first insulating film so asto cover the pad; (e) forming an opening portion, which exposes a partof the pad, in the second insulating film; (f) forming a metal film onthe pad exposed from the opening portion and on the second insulatingfilm; (g) bringing a probe into contact with the metal film to perform aprobe inspection; and (h) boding a wire to the metal film, wherein themetal film integrally includes a first portion located on the padexposed from the opening portion and a second portion located on thesecond insulating film, in the step (g), the probe is brought intocontact with the second portion of the metal film, and in the step (h),the wire is bonded to the first portion of the metal film.
 13. Themethod for manufacturing a semiconductor device according to claim 12,wherein the second insulating film is an inorganic insulating film or alaminated film including an inorganic insulating film.
 14. The methodfor manufacturing a semiconductor device according to claim 12, whereinthe second insulating film is a silicon nitride film or a laminated filmincluding a silicon nitride film.
 15. The method for manufacturing asemiconductor device according to claim 12, wherein the secondinsulating film is a laminated film of a silicon nitride film and asilicon oxide film located on the silicon nitride film.
 16. The methodfor manufacturing a semiconductor device according to claim 12, whereinthe metal film includes a gold film.
 17. The method for manufacturing asemiconductor device according to claim 12, wherein the metal film iscomposed of a laminated film of a nickel film and a gold film located onthe nickel film, and the gold film is an uppermost layer of thelaminated film.
 18. The method for manufacturing a semiconductor deviceaccording to claim 17, wherein the gold film is thicker than the nickelfilm.
 19. The method for manufacturing a semiconductor device accordingto claim 12, wherein the pad is an aluminum pad.
 20. The method formanufacturing a semiconductor device according to claim 12, wherein thesecond insulating film and the pad are present below a region of anupper surface of the metal film with which the probe is brought intocontact in the step (g), and the pad is present but the secondinsulating film is not present below a region of the upper surface ofthe metal film to which the wire is bonded in the step (h).